The 3D NAND flash memory market size is expected to see exponential growth in the next few years. It will grow to $55.27 billion in 2028 at a compound annual growth rate (CAGR) of 24.4%. The anticipated growth in the forecast period can be attributed to the prominence of automotive electronics, heightened demand for higher capacities, enterprise storage requirements, an emphasis on supply chain resilience, and increasing environmental considerations. Key trends expected in the forecast period include technological advancements in memory architecture, a transition to higher layer counts, integration of artificial intelligence (AI), and market consolidation and competition.
The surge in data center demand is anticipated to serve as a significant catalyst propelling the expansion of the 3D NAND flash memory market. Data centers represent physical facilities housing a company's critical applications and data. These centers are engineered around a network infrastructure comprising computer and storage resources, facilitating the dissemination of shared applications and data. Characterized by components boasting redundant capacities and a singular, non-redundant distribution path, data centers ensure operational continuity. For instance, in August 2021, Tech Wire Asia featured an article highlighting the exponential growth in demand for data center infrastructures in India. This growth surge is attributed to escalating cloud adoption rates, alongside the unparalleled levels of data generation and consumption stemming from approximately 500 million digital users. Additionally, a 2021 report by JLL India, a real estate services firm, outlined that the Indian data center sector would necessitate investments totaling $3.7 billion within the following three years to cater to the industry's requirement for six million square feet of development space. Consequently, the escalating need for data centers is poised to act as a driving force behind the burgeoning growth of the 3D NAND flash memory market.
The anticipated surge in smartphone adoption is poised to significantly drive the expansion of the 3D NAND flash memory market in the foreseeable future. Smartphones, characterized by their incorporation of cellular communication alongside built-in computing capabilities, offer functionalities such as operating systems, web browsing, and software program execution. Within these devices, the integration of 3D NAND flash memory translates to heightened storage capacities, swifter data transfer rates, and enhanced reliability. This technology empowers users to seamlessly store and access substantial volumes of data within compact yet high-performance mobile gadgets. For example, in February 2023, Uswitch Limited reported a notable increase in mobile connections in the UK, reaching 71.8 million in 2022, marking a 3.8% surge compared to 2021, equivalent to around 2.6 million additional connections. Forecasts suggest that the UK's population is expected to reach 68.3 million by 2025, with an estimated 95% ownership of smartphones among approximately 65 million individuals. This surge in smartphone ownership is anticipated to serve as a primary driving force behind the escalating growth of the 3D NAND flash memory market.
Product innovation has emerged as a pivotal trend gaining considerable traction within the 3D NAND flash memory market. Major players in this sector are channeling their efforts towards developing novel technological solutions aimed at meeting the evolving demands of customers. For example, in December 2021, Yangtze River Storage Technology Co., Ltd. (YMTC), a China-based integrated device manufacturer (IDM) specializing in the design, production, and sale of 3D NAND flash memory, commenced production of its newly engineered 128-Layer, 3D QLC NAND. Similarly, in February 2021, Kioxia Corporation and Western Digital Corp jointly announced the successful development of a sixth-generation, 162-layer 3D flash memory technology. This advancement was achieved through a comprehensive array of technological and manufacturing innovations.
Major players in the 3D NAND flash memory market are intensifying their efforts to introduce innovative memory architectures, such as the X-NAND Flash Memory Architecture, in order to gain a competitive advantage. The X-NAND architecture is specifically engineered to provide improved performance, reliability, and scalability for data-centric applications by leveraging novel memory cell technology and advanced error correction mechanisms. As an illustration, in July 2022, NEO Semiconductor, a technology firm based in the United States, unveiled the second iteration of the X-NAND Flash Memory Architecture. This latest architecture offers 3D NAND flash memory with a remarkable 20-fold increase in write performance. Building upon existing 3D NAND flash memory technology, the X-NAND Gen2 aims to mitigate the shortcomings of current memory solutions. It empowers NAND flash to seamlessly integrate into ultra-high-bandwidth applications such as artificial intelligence, 5G, real-time analysis, virtual/augmented reality, and cybersecurity.
In January 2022, SK Hynix, a South Korea-based company known for its expertise in manufacturing dynamic random-access memory (DRAM) chips and flash memory chips, successfully acquired the initial phase of Intel's NAND and SSD business for $7 billion. This strategic acquisition is aimed at bolstering SK Hynix's capabilities in advancing the development of cutting-edge iterations of 3D NAND flash memory and revolutionizing the landscape of memory storage technology. SK Hynix envisions an opportunity to elevate its NAND flash business to the same echelon of competitiveness as its globally leading DRAM business. Intel, a US-based company operating across cloud computing, Internet of Things (IoT), NAND flash memory, and data center solutions, was the entity that initiated this acquisition agreement.
Major companies operating in the 3D nand flash memory market report are Samsung Electronics Co Ltd., Sony Corporation, Intel Corporation, SK Hynix Semiconductor Inc, Micron Technology Inc, Toshiba Corporation, Sharp Corporation, STMicroelectronics N.V., Kingston Technology Corporation, Infineon Technologies AG, Renesas Electronics Corporation, Western Digital Corporation, Seagate Technology PLC, ROHM Semiconductor, ADATA Technology Co. Ltd., Yangtze Memory Technologies Co. Ltd., Powerchip Technology Corporation, Biwin Storage Technology Co. Ltd., Phison Electronics Corporation, Nanya Technology Corporation, Macronix International Co. Ltd., Silicon Motion Technology Corporation, Transcend Information Inc., Integrated Silicon Solution Inc., Apacer Technology Inc., Netlist Inc., PNY Technologies Inc., Viking Technology, Maxio Technology Corporation, XTX Technology Limited, Crossbar Inc., 3D Plus, Everspin Technologies Inc.
Asia-Pacific was the largest region in the 3D NAND flash memory market in 2023. The regions covered in the 3D NAND flash memory market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the 3D NAND flash memory market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
The primary classifications of 3D NAND flash memory include single-level cell (SLC), multi-level cell (MLC), and triple-level cell (TLC). Multi-level cell flash memory is specifically characterized by its ability to store more than one bit of information per memory cell. These diverse 3D NAND flash memory types find applications in various devices such as cameras, laptops, PCs, smartphones, and tablets. End-users benefiting from these technologies span across industries including automotive, consumer electronics, enterprise, healthcare, and others.
The 3D NAND flash memory market research report is one of a series of new reports that provides 3D NAND flash memory market statistics, including 3D NAND flash memory industry global market size, regional shares, competitors with a 3D NAND flash memory market share, detailed 3D NAND flash memory market segments, market trends and opportunities, and any further data you may need to thrive in the 3D NAND flash memory industry. This 3D NAND flash memory market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.
The 3D NAND flash memory market consists of sales of the single-level cell, multi-level cell, triple-level cell, and quad-level cell . Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
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Table of Contents
Executive Summary
3D NAND Flash Memory Global Market Report 2024 provides strategists, marketers and senior management with the critical information they need to assess the market.This report focuses on 3d nand flash memory market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
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Where is the largest and fastest growing market for 3d nand flash memory? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward? This report answers all these questions and many more.
The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, competitive landscape, market shares, trends and strategies for this market. It traces the market’s historic and forecast market growth by geography.
- The market characteristics section of the report defines and explains the market.
- The market size section gives the market size ($b) covering both the historic growth of the market, and forecasting its development.
- The forecasts are made after considering the major factors currently impacting the market. These include:
- The impact of sanctions, supply chain disruptions, and altered demand for goods and services due to the Russian Ukraine war, impacting various macro-economic factors and parameters in the Eastern European region and its subsequent effect on global markets.
- The impact of higher inflation in many countries and the resulting spike in interest rates.
- The continued but declining impact of COVID-19 on supply chains and consumption patterns.
- Market segmentations break down the market into sub markets.
- The regional and country breakdowns section gives an analysis of the market in each geography and the size of the market by geography and compares their historic and forecast growth. It covers the growth trajectory of COVID-19 for all regions, key developed countries and major emerging markets.
- The competitive landscape chapter gives a description of the competitive nature of the market, market shares, and a description of the leading companies. Key financial deals which have shaped the market in recent years are identified.
- The trends and strategies section analyses the shape of the market as it emerges from the crisis and suggests how companies can grow as the market recovers.
Report Scope
Markets Covered:1) By Type: Single-Level Cell; Multi-Level Cell; Triple-Level Cell
2) By Application: Camera; Laptops and PCs; Smartphones and Tablets; Other Applications
3) By End-user: Automotive; Consumer Electronics; Enterprise; Healthcare; Other End-users
Key Companies Mentioned: Samsung Electronics Co Ltd.; Sony Corporation; Intel Corporation; SK Hynix Semiconductor Inc; Micron Technology Inc
Countries: Australia; Brazil; China; France; Germany; India; Indonesia; Japan; Russia; South Korea; UK; USA; Canada; Italy; Spain
Regions: Asia-Pacific; Western Europe; Eastern Europe; North America; South America; Middle East; Africa
Time Series: Five years historic and ten years forecast
Data: Ratios of market size and growth to related markets, GDP proportions, expenditure per capita
Data Segmentation: Country and regional historic and forecast data, market share of competitors, market segments
Sourcing and Referencing: Data and analysis throughout the report is sourced using end notes
Delivery Format: PDF, Word and Excel Data Dashboard
Companies Mentioned
- Samsung Electronics Co Ltd.
- Sony Corporation
- Intel Corporation
- SK Hynix Semiconductor Inc
- Micron Technology Inc
- Toshiba Corporation
- Sharp Corporation
- STMicroelectronics N.V.
- Kingston Technology Corporation
- Infineon Technologies AG
- Renesas Electronics Corporation
- Western Digital Corporation
- Seagate Technology PLC
- ROHM Semiconductor
- ADATA Technology Co. Ltd.
- Yangtze Memory Technologies Co. Ltd.
- Powerchip Technology Corporation
- Biwin Storage Technology Co. Ltd.
- Phison Electronics Corporation
- Nanya Technology Corporation
- Macronix International Co. Ltd.
- Silicon Motion Technology Corporation
- Transcend Information Inc.
- Integrated Silicon Solution Inc.
- Apacer Technology Inc.
- Netlist Inc.
- PNY Technologies Inc.
- Viking Technology
- Maxio Technology Corporation
- XTX Technology Limited
- Crossbar Inc.
- 3D Plus
- Everspin Technologies Inc.
Table Information
Report Attribute | Details |
---|---|
No. of Pages | 200 |
Published | February 2024 |
Forecast Period | 2024 - 2028 |
Estimated Market Value ( USD | $ 23.06 Billion |
Forecasted Market Value ( USD | $ 55.27 Billion |
Compound Annual Growth Rate | 24.4% |
Regions Covered | Global |
No. of Companies Mentioned | 33 |