Technological advancements and innovations in the semiconductor industry propel the market into new frontiers of efficiency and performance. With each iteration, gate driver ICs undergo refinement and enhancement, integrating cutting-edge features such as built-in protection circuits, advanced isolation technologies, and intelligent thermal management systems. These advancements bolster the reliability and safety of power electronics systems and unlock new possibilities for innovation and application across diverse industries.
Gate driver ICs increasingly integrate additional functionalities to enhance system performance and simplify design complexity. Integrated features such as protection circuits, fault detection, under-voltage lockout (UVLO), over-current protection (OCP), and thermal management enable more robust and reliable operation of power electronics systems while reducing the need for external components. With the rise of fast-switching semiconductor devices, these are optimized for ultra-fast switching speeds to maximize efficiency and minimize switching losses.
According to the International Trade Administration (ITA), the South Korean government (the Ministry of Trade, Industry and Energy: MOTIE) established the 3rd Energy Master Plan in June 2019. The master plan aims to reduce Korea's total energy consumption by 14.4% by 2030, 17.2% by 2035, and 18.6% by 2040, below the projected business-as-usual (BAU) level. In October 2021, Korea announced its revised Nationally Defined Contribution (NDC), which includes plans to reduce carbon emissions by 40% by 2030 from 2018. Therefore, the expansion of the semiconductor industry and rising zero carbon emission policies in the region are propelling the market's growth.
The China market dominated the Asia Pacific Gate Driver ICs Market, By Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $279.2 Million by 2030. The Japan market is registering a CAGR of 4.8% during (2023 - 2030). Additionally, The Taiwan market would showcase a CAGR of 6.5% during (2023 - 2030).
Based on Transistor Type, the market is segmented into MOSFET, and IGBT. Based on Semiconductor Material, the market is segmented into SiC, and GaN. Based on Mode of Attachment, the market is segmented into On-chip, and Discrete. Based on Application, the market is segmented into Industrial, Commercial, and Residential. Based on countries, the market is segmented into China, Japan, India, South Korea, Singapore, Taiwan, and Rest of Asia Pacific.
List of Key Companies Profiled
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- NXP Semiconductors N.V.
- Rohm Co., Ltd.
- STMicroelectronics N.V.
- Toshiba Corporation
- Semtech Corporation
- Microchip Technology Incorporated
- ON Semiconductor Corporation
- Renesas Electronics Corporation
Market Report Segmentation
By Transistor Type (Volume, Million Units, USD Billion, 2019-2030)- MOSFET
- IGBT
- SiC
- GaN
- On-chip
- Discrete
- Industrial
- Commercial
- Residential
- China
- Japan
- India
- South Korea
- Singapore
- Taiwan
- Rest of Asia Pacific
Table of Contents
Companies Mentioned
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- NXP Semiconductors N.V.
- Rohm Co., Ltd.
- STMicroelectronics N.V.
- Toshiba Corporation
- Semtech Corporation
- Microchip Technology Incorporated
- ON Semiconductor Corporation
- Renesas Electronics Corporation
Methodology
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