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Europe Magneto Resistive RAM Market Size, Share & Trends Analysis Report By Material, By Application, By Country and Growth Forecast, 2024 - 2031

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    Report

  • 108 Pages
  • October 2024
  • Region: Europe
  • Marqual IT Solutions Pvt. Ltd (KBV Research)
  • ID: 6025670
The Europe Magneto Resistive RAM Market is expected to witness market growth of 37.8% CAGR during the forecast period (2024-2031).

The Germany market dominated the Europe Magneto Resistive RAM Market by Country in 2023, and is expected to continue to be a dominant market till 2031; thereby, achieving a market value of $1.99 billion by 2031. The UK market is exhibiting a CAGR of 36.6% during 2024-2031. Additionally, the France market would experience a CAGR of 38.8% during 2024-2031.



At the heart of MRAM’s appeal is its distinctive data storage mechanism. Unlike conventional memory types such as DRAM or NAND flash memory, which store data using electrical charges, MRAM leverages the magnetic properties of materials to store information. This allows MRAM to retain data even when power is cut, offering a form of non-volatility that combines the speed of SRAM with the persistent storage capabilities of flash memory. As a result, MRAM has become a valuable solution for applications that require both high-speed performance and reliable data retention, such as embedded systems, Internet of Things (IoT) devices, and critical infrastructure in automotive and industrial automation.

The demand for MRAM is also fueled by the rise of advanced technologies such as artificial intelligence (AI), machine learning, and edge computing. These technologies require memory solutions that rapidly handle large datasets and process information. MRAM's ability to provide high-speed access to data while maintaining low latency makes it an ideal choice for AI and machine learning workloads, where real-time processing is crucial. Furthermore, the necessity for fast and dependable memory becomes even more important as edge computing acquires momentum as data processing is moved closer to the source of data generation.

Spain's increasing demand for MRAM is linked to its growing automotive industry, which has seen steady gains in vehicle registrations, with a 2.2% increase recorded in June 2024, according to the European Automobile Manufacturers Association (ACEA). As a prominent car manufacturing hub in Europe, Spain's automotive sector is integrating advanced memory solutions like MRAM to support the development of next-generation vehicles, focusing on improving energy efficiency and system reliability. Hence, the region will present lucrative growth opportunities for the market throughout the forecast period.

List of Key Companies Profiled

  • Honeywell International, Inc.
  • Infineon Technologies AG
  • Intel Corporation
  • Samsung Electronics Co., Ltd. (Samsung Group)
  • Renesas Electronics Corporation
  • Micron Technology, Inc.
  • Everspin Technologies, Inc.
  • NVE Corporation
  • Avalanche Technology Inc.
  • Crocus Technology, Inc.

Market Report Segmentation

By Material

  • Spin-Transfer Torque MRAM (STT-MRAM)
  • Toggle MRAM

By Application

  • Enterprise Storage
  • Consumer Electronics
  • Robotics
  • Automotive
  • Aerospace & Defense
  • Other Application

By Country

  • Germany
  • UK
  • France
  • Russia
  • Spain
  • Italy
  • Rest of Europe

Table of Contents

Chapter 1. Market Scope & Methodology
1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 Europe Magneto Resistive RAM Market, by Material
1.4.2 Europe Magneto Resistive RAM Market, by Application
1.4.3 Europe Magneto Resistive RAM Market, by Country
1.5 Methodology for the research
Chapter 2. Market at a Glance
2.1 Key Highlights
Chapter 3. Market Overview
3.1 Introduction
3.1.1 Overview
3.1.1.1 Market Composition and Scenario
3.2 Key Factors Impacting the Market
3.2.1 Market Drivers
3.2.2 Market Restraints
3.2.3 Market Opportunities
3.2.4 Market Challenges
Chapter 4. Competition Analysis - Global
4.1 Market Share Analysis, 2023
4.2 Porter Five Forces Analysis
Chapter 5. Europe Magneto Resistive RAM Market by Material
5.1 Europe Spin-Transfer Torque MRAM (STT-MRAM) Market by Country
5.2 Europe Toggle MRAM Market by Country
Chapter 6. Europe Magneto Resistive RAM Market by Application
6.1 Europe Enterprise Storage Market by Country
6.2 Europe Consumer Electronics Market by Country
6.3 Europe Robotics Market by Country
6.4 Europe Automotive Market by Country
6.5 Europe Aerospace & Defense Market by Country
6.6 Europe Other Application Market by Country
Chapter 7. Europe Magneto Resistive RAM Market by Country
7.1 Germany Magneto Resistive RAM Market
7.1.1 Germany Magneto Resistive RAM Market by Material
7.1.2 Germany Magneto Resistive RAM Market by Application
7.2 UK Magneto Resistive RAM Market
7.2.1 UK Magneto Resistive RAM Market by Material
7.2.2 UK Magneto Resistive RAM Market by Application
7.3 France Magneto Resistive RAM Market
7.3.1 France Magneto Resistive RAM Market by Material
7.3.2 France Magneto Resistive RAM Market by Application
7.4 Russia Magneto Resistive RAM Market
7.4.1 Russia Magneto Resistive RAM Market by Material
7.4.2 Russia Magneto Resistive RAM Market by Application
7.5 Spain Magneto Resistive RAM Market
7.5.1 Spain Magneto Resistive RAM Market by Material
7.5.2 Spain Magneto Resistive RAM Market by Application
7.6 Italy Magneto Resistive RAM Market
7.6.1 Italy Magneto Resistive RAM Market by Material
7.6.2 Italy Magneto Resistive RAM Market by Application
7.7 Rest of Europe Magneto Resistive RAM Market
7.7.1 Rest of Europe Magneto Resistive RAM Market by Material
7.7.2 Rest of Europe Magneto Resistive RAM Market by Application
Chapter 8. Company Profiles
8.1 Honeywell International, Inc.
8.1.1 Company Overview
8.1.2 Financial Analysis
8.1.3 Segmental and Regional Analysis
8.1.4 Research & Development Expenses
8.1.5 SWOT Analysis
8.2 Infineon Technologies AG
8.2.1 Company Overview
8.2.2 Financial Analysis
8.2.3 Segmental and Regional Analysis
8.2.4 Research & Development Expense
8.2.5 SWOT Analysis
8.3 Intel Corporation
8.3.1 Company Overview
8.3.2 Financial Analysis
8.3.3 Segmental and Regional Analysis
8.3.4 Research & Development Expenses
8.3.5 SWOT Analysis
8.4 Samsung Electronics Co., Ltd. (Samsung Group)
8.4.1 Company Overview
8.4.2 Financial Analysis
8.4.3 Segmental and Regional Analysis
8.4.4 Research & Development Expenses
8.4.5 Recent strategies and developments:
8.4.5.1 Product Launches and Product Expansions:
8.4.6 SWOT Analysis
8.5 Renesas Electronics Corporation
8.5.1 Company Overview
8.5.2 Financial Analysis
8.5.3 Segmental and Regional Analysis
8.5.4 Research & Development Expense
8.5.5 Recent strategies and developments:
8.5.5.1 Product Launches and Product Expansions:
8.5.6 SWOT Analysis
8.6 Micron Technology, Inc.
8.6.1 Company Overview
8.6.2 Financial Analysis
8.6.3 Segmental and Regional Analysis
8.6.4 Research & Development Expenses
8.6.5 SWOT Analysis
8.7 Everspin Technologies, Inc.
8.7.1 Company Overview
8.7.2 Financial Analysis
8.7.3 Regional Analysis
8.7.4 Research & Development Expenses
8.7.5 SWOT Analysis
8.8 NVE Corporation
8.8.1 Company Overview
8.8.2 Financial Analysis
8.8.3 Research & Development Expenses
8.8.4 SWOT Analysis
8.9 Avalanche Technology Inc.
8.9.1 Company Overview
8.10. Crocus Technology, Inc.
8.10.1 Company overview

Companies Mentioned

  • Honeywell International, Inc.
  • Infineon Technologies AG
  • Intel Corporation
  • Samsung Electronics Co., Ltd. (Samsung Group)
  • Renesas Electronics Corporation
  • Micron Technology, Inc.
  • Everspin Technologies, Inc.
  • NVE Corporation
  • Avalanche Technology Inc.
  • Crocus Technology, Inc.

Methodology

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