The Latin America, Middle East and Africa Magneto Resistive RAM Market is expected to witness market growth of 40.2% CAGR during the forecast period (2024-2031).
The Brazil market dominated the LAMEA Magneto Resistive RAM Market by Country in 2023, and is expected to continue to be a dominant market till 2031; thereby, achieving a market value of $545 million by 2031. The Argentina market is expected to witness a CAGR of 42.1% during 2024-2031. Additionally, the UAE market would register a CAGR of 38.9% during 2024-2031.
MRAM is emerging as an ideal solution due to its fast access speeds and non-volatile nature, making it well-suited for the demands of 5G-enabled applications. MRAM's capacity to conduct rapid read and write operations and retain data without power guarantees that critical data is accessible, even in edge computing environments where devices may encounter intermittent power or connectivity issues, as 5G enables faster data transfer and increased connectivity.
By processing data in close proximity to its source, edge computing enhances the responsiveness of real-time applications such as smart factories, autonomous vehicles, and IoT devices, thereby reducing latency. MRAM's low power consumption and fast data access make it particularly valuable for these distributed systems, supporting real-time processing while extending battery life for edge devices. As the 5G and edge computing landscape evolves, MRAM's capabilities position it as a key memory solution to support the seamless operation of next-generation networks, enhancing the speed and efficiency of data storage and processing at the network's edge.
In Saudi Arabia, the demand for MRAM is driven by the enterprise storage segment as the country works to build a robust digital economy in line with its Vision 2030 initiative. The push towards digitization and the growing need for local data centers to support cloud services has increased the requirement for reliable and fast memory solutions. The Saudi government’s investment in building digital infrastructure and fostering a technology-friendly environment, including incentives for local and international tech companies, has created opportunities for advanced memory solutions like MRAM to gain traction in the enterprise storage sector. Hence, government support for technology investment, digitalization efforts, and foreign investment incentives across the region create a favorable environment for MRAM’s growth.
The Brazil market dominated the LAMEA Magneto Resistive RAM Market by Country in 2023, and is expected to continue to be a dominant market till 2031; thereby, achieving a market value of $545 million by 2031. The Argentina market is expected to witness a CAGR of 42.1% during 2024-2031. Additionally, the UAE market would register a CAGR of 38.9% during 2024-2031.
MRAM is emerging as an ideal solution due to its fast access speeds and non-volatile nature, making it well-suited for the demands of 5G-enabled applications. MRAM's capacity to conduct rapid read and write operations and retain data without power guarantees that critical data is accessible, even in edge computing environments where devices may encounter intermittent power or connectivity issues, as 5G enables faster data transfer and increased connectivity.
By processing data in close proximity to its source, edge computing enhances the responsiveness of real-time applications such as smart factories, autonomous vehicles, and IoT devices, thereby reducing latency. MRAM's low power consumption and fast data access make it particularly valuable for these distributed systems, supporting real-time processing while extending battery life for edge devices. As the 5G and edge computing landscape evolves, MRAM's capabilities position it as a key memory solution to support the seamless operation of next-generation networks, enhancing the speed and efficiency of data storage and processing at the network's edge.
In Saudi Arabia, the demand for MRAM is driven by the enterprise storage segment as the country works to build a robust digital economy in line with its Vision 2030 initiative. The push towards digitization and the growing need for local data centers to support cloud services has increased the requirement for reliable and fast memory solutions. The Saudi government’s investment in building digital infrastructure and fostering a technology-friendly environment, including incentives for local and international tech companies, has created opportunities for advanced memory solutions like MRAM to gain traction in the enterprise storage sector. Hence, government support for technology investment, digitalization efforts, and foreign investment incentives across the region create a favorable environment for MRAM’s growth.
List of Key Companies Profiled
- Honeywell International, Inc.
- Infineon Technologies AG
- Intel Corporation
- Samsung Electronics Co., Ltd. (Samsung Group)
- Renesas Electronics Corporation
- Micron Technology, Inc.
- Everspin Technologies, Inc.
- NVE Corporation
- Avalanche Technology Inc.
- Crocus Technology, Inc.
Market Report Segmentation
By Material
- Spin-Transfer Torque MRAM (STT-MRAM)
- Toggle MRAM
By Application
- Enterprise Storage
- Consumer Electronics
- Robotics
- Automotive
- Aerospace & Defense
- Other Application
By Country
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA
Table of Contents
Chapter 1. Market Scope & Methodology
Chapter 2. Market at a Glance
Chapter 3. Market Overview
Chapter 4. Competition Analysis - Global
Chapter 5. LAMEA Magneto Resistive RAM Market by Material
Chapter 6. LAMEA Magneto Resistive RAM Market by Application
Chapter 7. LAMEA Magneto Resistive RAM Market by Country
Chapter 8. Company Profiles
Companies Mentioned
- Honeywell International, Inc.
- Infineon Technologies AG
- Intel Corporation
- Samsung Electronics Co., Ltd. (Samsung Group)
- Renesas Electronics Corporation
- Micron Technology, Inc.
- Everspin Technologies, Inc.
- NVE Corporation
- Avalanche Technology Inc.
- Crocus Technology, Inc.
Methodology
LOADING...
