The North America High Electron Mobility Transistor Market would witness market growth of 6.6% CAGR during the forecast period (2023-2030).
Magnetic resonance imaging (MRI) machines rely on HEMTs for their ability to rapidly process signals. HEMTs contribute to the efficient functioning of the radiofrequency (RF) components in MRI systems, enabling the generation of detailed and high-resolution images of internal body structures. In CT scanners, where quick signal processing is essential for creating detailed cross-sectional images, HEMTs amplify and process signals. This contributes to the rapid acquisition of images, allowing for swift and accurate diagnostic assessments. HEMTs are integrated into signal chains of medical imaging devices to amplify weak signals generated by the body's response to applied stimuli. This signal amplification is crucial for improving the signal-to-noise ratio and enhancing the clarity and accuracy of diagnostic images.
Furthermore, in scientific research, HEMTs find applications in high-frequency instruments and particle detectors. Their ability to operate at microwave and millimeter-wave frequencies makes them invaluable for researchers conducting experiments that require precise and rapid signal processing. HEMTs are crucial in developing high-frequency signal generators used in scientific research. These instruments are essential for generating precise and stable signals at frequencies that are often beyond the capability of conventional transistors. The high-speed operation of HEMTs contributes to the efficient processing of signals in these generators.
As per the data from the Government of Canada, 5G networks will become a crucial component of Canada’s critical infrastructure over the next few years. This means Canadian telecommunications service providers will invest approximately $26 billion in Canadian networks by 2026. The growth of 5G networks in North America will boost the demand for IoT and other internet-connected devices. Therefore, this will help expand the market in the region since they are used in producing these devices.
The US market dominated the North America High Electron Mobility Transistor Market, by Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $1,907.5 Million by 2030. The Canada market is exhibiting a CAGR of 9% during (2023 - 2030). Additionally, The Mexico market would experience a CAGR of 8.1% during (2023 - 2030).
Based on Type, the market is segmented into Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others. Based on End-Use, the market is segmented into Consumer Electronics, Automotive, Industrial, Aerospace & Defense, and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation.
Magnetic resonance imaging (MRI) machines rely on HEMTs for their ability to rapidly process signals. HEMTs contribute to the efficient functioning of the radiofrequency (RF) components in MRI systems, enabling the generation of detailed and high-resolution images of internal body structures. In CT scanners, where quick signal processing is essential for creating detailed cross-sectional images, HEMTs amplify and process signals. This contributes to the rapid acquisition of images, allowing for swift and accurate diagnostic assessments. HEMTs are integrated into signal chains of medical imaging devices to amplify weak signals generated by the body's response to applied stimuli. This signal amplification is crucial for improving the signal-to-noise ratio and enhancing the clarity and accuracy of diagnostic images.
Furthermore, in scientific research, HEMTs find applications in high-frequency instruments and particle detectors. Their ability to operate at microwave and millimeter-wave frequencies makes them invaluable for researchers conducting experiments that require precise and rapid signal processing. HEMTs are crucial in developing high-frequency signal generators used in scientific research. These instruments are essential for generating precise and stable signals at frequencies that are often beyond the capability of conventional transistors. The high-speed operation of HEMTs contributes to the efficient processing of signals in these generators.
As per the data from the Government of Canada, 5G networks will become a crucial component of Canada’s critical infrastructure over the next few years. This means Canadian telecommunications service providers will invest approximately $26 billion in Canadian networks by 2026. The growth of 5G networks in North America will boost the demand for IoT and other internet-connected devices. Therefore, this will help expand the market in the region since they are used in producing these devices.
The US market dominated the North America High Electron Mobility Transistor Market, by Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $1,907.5 Million by 2030. The Canada market is exhibiting a CAGR of 9% during (2023 - 2030). Additionally, The Mexico market would experience a CAGR of 8.1% during (2023 - 2030).
Based on Type, the market is segmented into Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others. Based on End-Use, the market is segmented into Consumer Electronics, Automotive, Industrial, Aerospace & Defense, and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation.
Scope of the Study
Market Segments Covered in the Report:
By Type- Gallium Nitride (GaN)
- Silicon Carbide (SiC)
- Gallium Arsenide (GaAs)
- Others
- Consumer Electronics
- Automotive
- Industrial
- Aerospace & Defense
- Others
- US
- Canada
- Mexico
- Rest of North America
Key Market Players
List of Companies Profiled in the Report:
- Qorvo, Inc.
- Infineon Technologies AG
- MACOM Technology Solutions Holdings, Inc.
- WOLFSPEED, INC.
- Texas Instruments, Inc.
- Sumitomo Electric Industries, Ltd.
- Analog Devices, Inc.
- Intel Corporation
- NXP Semiconductors N.V.
- Mitsubishi Electric Corporation
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- Exhaustive coverage
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Table of Contents
Chapter 1. Market Scope & Methodology
Chapter 2. Market At a Glance
Chapter 3. Market Overview
Chapter 4. North America High Electron Mobility Transistor Market, by Type
Chapter 5. North America High Electron Mobility Transistor Market, by End-Use
Chapter 6. North America High Electron Mobility Transistor Market, by Country
Chapter 7. Company Profiles
Companies Mentioned
- Qorvo, Inc.
- Infineon Technologies AG
- MACOM Technology Solutions Holdings, Inc.
- WOLFSPEED, INC.
- Texas Instruments, Inc.
- Sumitomo Electric Industries, Ltd.
- Analog Devices, Inc.
- Intel Corporation
- NXP Semiconductors N.V.
- Mitsubishi Electric Corporation
Methodology
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