Power MOSFETs are extensively utilized in power supply units, inverters, and converters across various industries. The demand for stable and reliable power supplies in applications such as telecommunications, data centers, and industrial equipment has driven the integration of advanced power MOSFETs. The ability of these devices to handle high voltages and currents, coupled with their fast-switching speeds, makes them ideal for power conversion applications. The market is witnessing a notable trend towards the adoption of Wide Bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). WBG materials offer superior performance characteristics, including higher breakdown voltages and thermal conductivity, leading to more efficient power conversion.
With the proliferation of portable electronic devices and the Internet of Things (IoT), there is a growing emphasis on miniaturization and integration of components. Power MOSFET manufacturers respond to this trend by developing compact and highly integrated solutions. This not only reduces the footprint of electronic systems but also enhances their reliability and efficiency. Gallium Nitride (GaN) power MOSFETs are gaining traction due to their ability to operate at higher frequencies and temperatures than traditional silicon based MOSFETs. The advantages of GaN technology, such as lower switching losses and reduced on-state resistance, make them attractive for applications demanding high efficiency and power density, including power supplies, electric vehicles, and renewable energy systems.
North America has witnessed significant growth in renewable energy projects, including solar and wind power installations. Power MOSFETs play a crucial role in the inverters that convert DC power from renewable sources into AC power for the grid. The industrial sector in North America continues to invest in automation and control systems. North America is a significant industry for automotive electronics. These aspects will boost market growth in the coming years.
The US market dominated the North America Power MOSFET Market by Country in 2022 and would continue to be a dominant market till 2030; thereby, achieving a market value of $2,238.1 million by 2030. The Canada market is experiencing a CAGR of 8.9% during (2023 - 2030). Additionally, The Mexico market would exhibit a CAGR of 7.9% during (2023 - 2030).
Based on Type, the market is segmented into Enhancement Mode Enterprises, and Depletion Mode. Based on Power Rates, the market is segmented into Low Power, Medium Power, and High-Power. Based on Application, the market is segmented into Automotive, Consumer Electronics, Industrial, Energy & Power, Inverter & UPS, and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stakeholders of the market. Key companies profiled in the report include STMicroelectronics N.V., Texas Instruments, Inc., NXP Semiconductors N.V., Digikey, Power Integrations Inc., Littlefuse, Inc., Mitsubishi Electric Corporation, Infineon Technologies AG, Toshiba Corporation, Renesas Electronics Corporation.
Scope of the Study
Market Segments Covered in the Report:
By Type (Volume, Thousand Units, USD Million, 2019-2030)- Enhancement Mode Enterprises
- Depletion Mode
- Low Power
- Medium Power
- High-Power
- Automotive
- Consumer Electronics
- Industrial
- Energy & Power
- Inverter & UPS
- Others
- US
- Canada
- Mexico
- Rest of North America
Key Market Players
List of Companies Profiled in the Report:
- STMicroelectronics N.V.
- Texas Instruments, Inc.
- NXP Semiconductors N.V.
- Digikey
- Power Integrations Inc.
- Littlefuse, Inc.
- Mitsubishi Electric Corporation
- Infineon Technologies AG
- Toshiba Corporation
- Renesas Electronics Corporation
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Table of Contents
Companies Mentioned
- STMicroelectronics N.V.
- Texas Instruments, Inc.
- NXP Semiconductors N.V.
- Digikey
- Power Integrations Inc.
- Littlefuse, Inc.
- Mitsubishi Electric Corporation
- Infineon Technologies AG
- Toshiba Corporation
- Renesas Electronics Corporation
Methodology
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