III-Nitride Electronic Devices. Semiconductors and Semimetals Volume 102

Table of Contents

1. Electronic properties of III-nitride materials and basics of III-nitride FETs Peter M. Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-Nitride microwave power transistors Jeong-Sun Moon 4. III-Nitride millimeter wave transistors Keisuke Shinohara 5. III-Nitride lateral transistor power switch Sang-Woo Han and Rongming Chu 6. III-Nitride vertical devices Tohru Oka 7. Physics-based III-Nitride device modeling Ujwal Radhakrishna 8. Power electronics applications of III-nitride transistors Yifeng Wu 9. N-polar III-nitride transistors M.H. Wong and U.K. Mishra 10. III-Nitride ultra-wide-bandgap electronic devices Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein and Shahed Reza 11. III-Nitride p-channel transistors Akira Nakajima 12. Emerging materials, processing and device concepts David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal and Brian P. Downey 13. Epitaxial lift-off for III-nitride devices Chris Youtsey, Robert McCarthy and Patrick Fay