In 2021, the global IGBT market was valued at US$6.96 billion and is expected to grow to US$11.32 billion by 2026. Insulated Gate Bipolar Transistor (IGBT) is a bipolar transistor with an insulated gate terminal. IGBTs are suitable for high-voltage, high-current applications and need a minimum voltage on the gate to keep a system functioning. The IGBT combines the main features of both BJT (Bipolar Junction Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistors) into a single device. The main advantages of IGBT over other types of transistor devices are: Fast switching speed and combined with zero gate drive current, ease of drive, high pulse current tolerance, high input impedance, high voltage capability Due to various factors such as rising adoption of EVs, renewable energy generation, home appliances consumption, etc., the market would see notable growth. The IGBT market is expected to grow at a CAGR of 10.40% over the forecast period of 2022-2026.
Market Segmentation Analysis:
By IGBT Type: The report identifies three segments based on IGBT type: IGBT Module, Discrete IGBT, and Intelligent Power Module (IPM). In 2021, the IGBT Module segment lead the market, accounting for more than 50% share of the market because IGBT modules are widely employed in three primary fields: industrial control and power, new energy, and inverter white home appliances and other applications. The discrete IGBT market is expected to grow at the highest CAGR, due to its simple structure and low cost.
By Application: The report includes the bifurcation of the market into five segments based on application: Automotive, Home Appliances, Industrial, Power Grid, railways, and Renewable Energy. The automotive segment dominated the market with a share of 30% of the market. The growth in the automotive sector was primarily driven by the rising adoption of electric vehicles.
By Region: In the report, the global IGBT market is divided into four regions: Asia Pacific, Europe, North America, and RoW. The Asia Pacific dominated the market in 2021 with almost 58.7% share of the global market. The factor driving the IGBT market in the Asia Pacific is the presence of various global and domestic players, especially in China. China is the leading IGBT market in the Asia Pacific region. The rapid growth of the automotive market in countries like China, Japan, Taiwan, etc. would boost the IGBT market of the Asia Pacific region in the years to come. The North American IGBT market provides lucrative opportunities in the coming years. The rapid development in the industrial sector and government initiatives to strengthen semiconductor chip production capacity give a resilient opportunity for the IGBT market.
Competitive Landscape
The global IGBT market is dominated by the presence of a few major players. The top three players occupied more than 50% share of the market.
Infineon is more diverse in terms of types of IGBT it provides and the company is present in all the regions. In China’s IGBT market, global players took most market share. Infineon took most of the shares of China’s IGBT market. Among domestic players, Starpower acquired the highest share. It is expected that StarPower to gain further market share over the next few years on the back of the positive outlook for the China IGBT market, and China’s semiconductor localization trend.
Market Segmentation Analysis:
By IGBT Type: The report identifies three segments based on IGBT type: IGBT Module, Discrete IGBT, and Intelligent Power Module (IPM). In 2021, the IGBT Module segment lead the market, accounting for more than 50% share of the market because IGBT modules are widely employed in three primary fields: industrial control and power, new energy, and inverter white home appliances and other applications. The discrete IGBT market is expected to grow at the highest CAGR, due to its simple structure and low cost.
By Application: The report includes the bifurcation of the market into five segments based on application: Automotive, Home Appliances, Industrial, Power Grid, railways, and Renewable Energy. The automotive segment dominated the market with a share of 30% of the market. The growth in the automotive sector was primarily driven by the rising adoption of electric vehicles.
By Region: In the report, the global IGBT market is divided into four regions: Asia Pacific, Europe, North America, and RoW. The Asia Pacific dominated the market in 2021 with almost 58.7% share of the global market. The factor driving the IGBT market in the Asia Pacific is the presence of various global and domestic players, especially in China. China is the leading IGBT market in the Asia Pacific region. The rapid growth of the automotive market in countries like China, Japan, Taiwan, etc. would boost the IGBT market of the Asia Pacific region in the years to come. The North American IGBT market provides lucrative opportunities in the coming years. The rapid development in the industrial sector and government initiatives to strengthen semiconductor chip production capacity give a resilient opportunity for the IGBT market.
Global IGBT Market Dynamics:
- Growth Drivers: The market has been growing over the past few years, due to factors such as rising wind power generation, rising solar power generation, rising household appliances consumption, escalating industrial activities, increasing adoption of electric vehicles, and growing use of IGBT in railways, etc. The consumption of household appliances such as air conditioners, refrigerators, inverters, microwave ovens, etc. is rapidly increasing. IGBTs are commonly used in household appliances as voltage resonance power converters. Rising sales of household appliances indicate the increasing demand for IGBT.
- Challenges: However, the market has been confronted with some challenges specifically, latch up the issues in IGBT, availability of alternatives, etc. Alternatives like silicon carbide-based MOSFET can replace traditional Si-based IGBTs. The main challenge for IGBT is the Latch-up issue which is considered a serious problem in IGBT. Latch-Up is a functional chip failure associated with excessive current going through the chip and this is mainly caused by weak design.
- Trends: The market is projected to grow at a fast pace during the forecast period, due to various latest trends such as the rising adoption of silicon carbide (SiC), new generation IGBTs, etc. Since SiC occupies a very small area of the chip and has a high current density, its ability to withstand short circuits that can cause thermal breaks tends to be lower than that of silicon-based devices. The demand for these newly introduced modern technologies has increased as people become more concerned about energy consumption. The shift towards renewable energy is also acting as a most important trend in the IGBT market.
Global Power Sic Device Market Revenue 2018 - 2025 (US$ Billion)
Impact Analysis of COVID-19 and Way Forward
The global impact of COVID-19 has been unexpected and staggering, with insulated gate bipolar transistors witnessing a negative impact on demand across all regions. Insulated gate bipolar transistor manufacturing has been extremely disturbed in the first quarter of 2020, due to the lack of components available. Moreover, the unavailability of the total workforce affected the insulated gate bipolar transistor production capacity and market growth. Due to the imposed lockdown, the automakers around the world cut the orders as vehicle sales plummeted. This was an important factor that had a detrimental impact on the market of insulated gate bipolar transistors. Thus, in the year 2020, the market experienced a slow growth rate as compared to the pre-pandemic level. As lockdown restrictions were normalized in the second half of 2020, demand for power semiconductors was returned to the pre-pandemic level.Competitive Landscape
The global IGBT market is dominated by the presence of a few major players. The top three players occupied more than 50% share of the market.
The key players in the global IGBT market are:
- Infineon Technology,
- Mitsubishi Electric
- ABB Ltd.
- Toshiba Corporation
- Renesas Electronics Corporation
- STMicroelectronics N.V.
- Fuji Electric
- Hitachi, Ltd.
- ROHM Semiconductor
- NXP Semiconductor N.V.
- Vincotech
- Semikron
- Danfoss Group
- StarPower Semiconductor
Infineon is more diverse in terms of types of IGBT it provides and the company is present in all the regions. In China’s IGBT market, global players took most market share. Infineon took most of the shares of China’s IGBT market. Among domestic players, Starpower acquired the highest share. It is expected that StarPower to gain further market share over the next few years on the back of the positive outlook for the China IGBT market, and China’s semiconductor localization trend.
Table of Contents
1. Executive Summary
2. Introduction
3. Global Market Analysis
4. Regional Market Analysis
5. Impact of Covid-19
6. Market Dynamics
7. Competitive Landscape
8. Company Profiles
List of Figures
Executive Summary
Insulated Gate Bipolar Transistor (IGBT) is a bipolar transistor with an insulated gate terminal. IGBTs are suitable for high-voltage, and high-current applications. IGBT only needs a minimal voltage on the gate to keep the device functioning. IGBT is a unidirectional device, which means that it can switch current in one way, from Collector to Emitter. The IGBT combines the main features of both BJT (Bipolar Junction Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistors) into a single device.Scope of the Report:
The report titled “Global Insulated Gate Bipolar Transistor (IGBT) Market: Analysis By IGBT type, By Application, By Region Size and Trends with Impact of COVID-19 and forecast up to 2026”, includes:- An in-depth analysis of the global IGBT market by value, by IGBT type, by application, by region, etc.
- The regional analysis of the IGBT market, including the following regions: Asia Pacific (China, Japan and Rest of Asia Pacific), Europe (UK, Germany, France, Italy and Rest of Europe), North America (The US and Rest of North America) and RoW
- A detailed analysis of the China IGBT market by value and by application.
- Comprehensive information about emerging markets.
- This report analyses the market for various segments across geographies.
- Provides an analysis of the COVID-19 impact on the global IGBT market.
- Assesses the key opportunities in the market and outlines the factors that are and will be driving the growth of the industry. Growth of the overall IGBT market has also been forecasted for the period 2022-2026, taking into consideration the previous growth patterns, the growth drivers, and the current and future trends.
- Evaluation of the potential role of IGBT to improve the market status.
- Identification of new technological developments, R&D activities, and product launches occuring in the IGBT market
- In-depth profiling of the key players, including the assessment of the business overview, market strategies, regional and business segments of the leading players in the market.
- The recent developments, mergers and acquisitions related to mentioned key players are provided in the market report.
- The in-depth analysis provides an insight into the Market, underlining the growth rate and opportunities offered in the business.
Companies Mentioned
- ABB Ltd
- Danfoss Group
- Fuji Electric
- Hitachi, Ltd.
- Infineon Technology
- Mitsubishi Electric
- NXP Semiconductor N.V.
- Renesas Electronic Corporation
- ROHM Semiconductor
- Semikron
- StarPower Semiconductor
- STMicroelectronics N.V.
- Toshiba Corporation
- Vincotech
Methodology
LOADING...
