The global next generation memory market size reached US$ 6.1 Billion in 2023. Looking forward, the publisher expects the market to reach US$ 42.8 Billion by 2032, exhibiting a growth rate (CAGR) of 24.2% during 2023-2032.
Next generation memory refers to a fast, efficient and cost-effective storage solution that can store more data than silicon chips. It consequently finds extensive applications in the telecommunications, information technology (IT), and banking, financial services and insurance (BFSI) industries across the globe. At present, there is a surge in the requirement for high bandwidth, low power consumption, and highly scalable memory devices that rely on artificial intelligence (AI), the Internet of things (IoT), big data and other technologies. This, in turn, is catalyzing the demand for next generation memory.
Magneto-Resistive Random-Access Memory (MRAM)
Ferroelectric RAM (FRAM)
Resistive Random-Access Memory (ReRAM)
3D Xpoint
Nano RAM
Other Non-Volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
Volatile
Hybrid Memory Cube (HMC)
High-Bandwidth Memory (HBM)
300 mm
450 mm
Embedded Storage
Others
Consumer Electronics
Government
Telecommunications
Information Technology
Others
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
What has been the impact of COVID-19 on the global next generation memory market?
What are the key regional markets?
What is the breakup of the market based on the technology?
What is the breakup of the market based on the wafer size?
What is the breakup of the market based on the storage type?
What is the breakup of the market based on the application?
What are the various stages in the value chain of the industry?
What are the key driving factors and challenges in the industry?
What is the structure of the global next generation memory market and who are the key players?
What is the degree of competition in the industry?
Next generation memory refers to a fast, efficient and cost-effective storage solution that can store more data than silicon chips. It consequently finds extensive applications in the telecommunications, information technology (IT), and banking, financial services and insurance (BFSI) industries across the globe. At present, there is a surge in the requirement for high bandwidth, low power consumption, and highly scalable memory devices that rely on artificial intelligence (AI), the Internet of things (IoT), big data and other technologies. This, in turn, is catalyzing the demand for next generation memory.
Next Generation Memory Market Trends:
There is presently a significant rise in the traction of universal memory worldwide. This, in confluence with the burgeoning electronics industry, represents one of the key factors bolstering the growth of the market. Apart from this, with the growing sales of smartphones, tablets, universal serial bus (USB) drives, and solid-state drives (SSD), the demand for NOT-AND (NAND) flash memory, which is a type of non-volatile storage technology that does not need energy to retain data is also increasing. Besides this, high-bandwidth memory (HBM), a next generation memory technology for graphics, is rapidly being used in leading-edge graphics, networking, high-performance computing (HPC), and artificial intelligence (AI) systems. For instance, it is utilized in decoders, fully autonomous vehicles, neural network designs, and other advanced applications that require low power and enormous bandwidth. This, coupled with the rising usage of wearable devices, is facilitating the growth of the market. Other factors, such as the increasing use of connected cars and considerable growth in the IT industry, are projected to create a positive outlook for the market in the upcoming years.Key Market Segmentation:
The report provides an analysis of the key trends in each sub-segment of the global next generation memory market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on technology, wafer size, storage type and application.Breakup by Technology:
Non-VolatileMagneto-Resistive Random-Access Memory (MRAM)
Ferroelectric RAM (FRAM)
Resistive Random-Access Memory (ReRAM)
3D Xpoint
Nano RAM
Other Non-Volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
Volatile
Hybrid Memory Cube (HMC)
High-Bandwidth Memory (HBM)
Breakup by Wafer Size:
200 mm300 mm
450 mm
Breakup by Storage Type:
Mass StorageEmbedded Storage
Others
Breakup by Application:
BFSIConsumer Electronics
Government
Telecommunications
Information Technology
Others
Breakup by Region:
North AmericaUnited States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
Competitive Landscape:
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology, Crossbar Inc., Fujitsu Limited, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Micron Technology Inc., Nantero Inc., Samsung Electronics Co. Ltd., SK hynix Inc., Spin Memory Inc. and Taiwan Semiconductor Manufacturing Co. Ltd.Key Questions Answered in This Report:
How has the global next generation memory market performed so far and how will it perform in the coming years?What has been the impact of COVID-19 on the global next generation memory market?
What are the key regional markets?
What is the breakup of the market based on the technology?
What is the breakup of the market based on the wafer size?
What is the breakup of the market based on the storage type?
What is the breakup of the market based on the application?
What are the various stages in the value chain of the industry?
What are the key driving factors and challenges in the industry?
What is the structure of the global next generation memory market and who are the key players?
What is the degree of competition in the industry?
Table of Contents
1 Preface3 Executive Summary12 Value Chain Analysis14 Price Analysis
2 Scope and Methodology
4 Introduction
5 Global Next Generation Memory Market
6 Market Breakup by Technology
7 Market Breakup by Wafer Size
8 Market Breakup by Storage Type
9 Market Breakup by Application
10 Market Breakup by Region
11 SWOT Analysis
13 Porters Five Forces Analysis
15 Competitive Landscape
List of Figures
List of Tables
Companies Mentioned
- Avalanche Technology
- Crossbar Inc.
- Fujitsu Limited
- Honeywell International Inc.
- Infineon Technologies AG
- Intel Corporation
- Micron Technology Inc.
- Nantero Inc.
- Samsung Electronics Co. Ltd.
- SK hynix Inc.
- Spin Memory Inc.
- Taiwan Semiconductor Manufacturing Co. Ltd.
Methodology
LOADING...
Table Information
Report Attribute | Details |
---|---|
No. of Pages | 144 |
Published | July 2024 |
Forecast Period | 2023 - 2032 |
Estimated Market Value ( USD | $ 6.1 Billion |
Forecasted Market Value ( USD | $ 42.8 Billion |
Compound Annual Growth Rate | 24.2% |
Regions Covered | Global |
No. of Companies Mentioned | 12 |