The Global Tunnel Field Effect Transistor Market size is expected to reach $1.6 billion by 2028, rising at a market growth of 9.8% CAGR during the forecast period.
Tunnel Field Effective Transistor (TFET) is an experimental transistor type. Even though its structure is very similar to that of a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), the fundamental switching mechanism is different, making this device a promising candidate for low-power electronics. Unlike the traditional MOSFETs, the TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a wall.
Due to this, TFETs are not limited by the thermal Maxwell-Boltzmann tail of carriers, which restricts MOSFET drain current subthreshold swing to around 60 mV/decade of current at room temperature. The device is run by applying gate bias so that electron gathering occurs in the intrinsic region for an n-type TFET. Band-to-band tunneling occurs when the intrinsic region's conduction band aligns with the P region's valence band at sufficient gate bias.
Current can flow across the device when electrons from the valence band of the p-type region tunnel into the conduction band of the intrinsic region. As the gate bias decreases, the bands become misaligned, and current can no longer flow. This transistor is built on Si (silicon) and is a three or four-terminal device. The working principle of this transistor is gate-controlled band-to-band tunneling and its basic structure is a gated PIN (Positive- Intrinsic-Negative) diode.
Compared to the MOSFET, it has various advantages, like being apt for low-power applications due to lower outflow current and better immunity to short-channel effects. Also, it has a sub-threshold swing that is not limited to 60mV/decade, more incredible operating speed due to the tunneling, the threshold voltage is much smaller, and the current ratio is low off and higher on/out.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Texas Instruments, Inc., Infineon Technologies AG, ON Semiconductor Corporation, Broadcom, Inc., STMicroelectronics N.V., Advanced Linear Devices, Inc., Axcera, Inc., and Focus Microwaves, Inc.
Tunnel Field Effective Transistor (TFET) is an experimental transistor type. Even though its structure is very similar to that of a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), the fundamental switching mechanism is different, making this device a promising candidate for low-power electronics. Unlike the traditional MOSFETs, the TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a wall.
Due to this, TFETs are not limited by the thermal Maxwell-Boltzmann tail of carriers, which restricts MOSFET drain current subthreshold swing to around 60 mV/decade of current at room temperature. The device is run by applying gate bias so that electron gathering occurs in the intrinsic region for an n-type TFET. Band-to-band tunneling occurs when the intrinsic region's conduction band aligns with the P region's valence band at sufficient gate bias.
Current can flow across the device when electrons from the valence band of the p-type region tunnel into the conduction band of the intrinsic region. As the gate bias decreases, the bands become misaligned, and current can no longer flow. This transistor is built on Si (silicon) and is a three or four-terminal device. The working principle of this transistor is gate-controlled band-to-band tunneling and its basic structure is a gated PIN (Positive- Intrinsic-Negative) diode.
Compared to the MOSFET, it has various advantages, like being apt for low-power applications due to lower outflow current and better immunity to short-channel effects. Also, it has a sub-threshold swing that is not limited to 60mV/decade, more incredible operating speed due to the tunneling, the threshold voltage is much smaller, and the current ratio is low off and higher on/out.
COVID-19 Impact Analysis
The tunnel field effect transistor market has been majorly affected by the outbreak of the COVID-19 pandemic. With governments of several nations imposing and extending lockdowns, production & manufacturing facilities around the world were forced to shut down. Which leads to crisis and unavailability of the workforce. Furthermore, the pandemic outbreak has disrupted the supply chain globally, creating a significant gap in the supply chain. The economic impact of the pandemic has also been disruptive. Major market players operating in the tunnel field effect transistor industry temporarily witnessed a slowdown. This was due to the lack of availability of skilled workers to develop tunnel field effect transistor market solutions, which led to reduced revenues. Although, the market is expected to recover from the pandemic and retain growth at a rapid pace in the projected period.Market Growth Factors
The growth of the semiconductor industry
The semiconductors' application is numerous and becoming increasingly essential to daily life. For example, semiconductors are critical components in consumer electronics, including mobile phones & laptops, game consoles, microwaves & refrigerators, and more. They are also essential components of embedded systems, especially small computers, that make it possible to manufacture various products like digital watches, GPS systems, televisions, central heating systems, fitness trackers, and many more. Hence, their utilization in products like mobile phones, microwaves, LEDs, etc., will support the expansion of need of semiconductor, further offering growth prospects to the tunnel field effect transistor market.Government support through various policies
As semiconductors are utilized in a significant part of all electronic products, growth in the electronic manufacturing sector has also been witnessed during the past few years. Therefore, various nations' governments are also concentrating on the importance of building an overall semiconductor ecosystem, which can aid in catalyzing the rapidly expanding electronics manufacturing and innovation ecosystem. In addition, governments are also revitalizing domestic manufacturing, which can create good-paying jobs, accelerate future industries, and strengthen the supply chain.Market Restraining Factors
Nonidealities causing SS degradation
In proper semiconductor materials, the crystal structure has non-uniformities like vacancies, interface states & impurities, including dopants that are added as a part of the desired structure. The primary consequence of these non-uniformities is to add new electron/hole states inside the ideal bandgap, which can weaken the energy filtering that the TFET uses to achieve steep SS. The TFET is more susceptible to trap-induced degradation than the MOSFET if the energy & location of the traps are assumed nearer to N-TFET’s worst-case point, like inside the channel with energy levels 0.1∼0.2V below the conduction band. The SS degradation is expected to decrease the tunnel field effect transistor's utilization and hinder the market growth.Product Type Outlook
On the basis of product type, the tunnel field effect transistor market is divided into lateral tunneling and vertical tunneling. The vertical segment acquired a significant revenue share in the tunnel field effect the transistor market in 2021. This is because the vertical-mode TFET is provided with an oxide region. The vertical TFET has various advantages, like a steeper subthreshold slope, as the gate voltage controls the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operations. These features of the vertical TFET are expected to expand the segment growth.End-Use Outlook
By end-user, the tunnel field effect transistor market is classified into consumer electronics, automotive, industrial, aerospace & defense and others. The consumer electronic segment witnessed the highest revenue share in the tunnel field effect transistor market in 2021. This is due to the use of transistors in semiconductors, which are utilized in almost every electronics product. Consumer electronics like mobile phones, gaming consoles, microwaves, refrigerators and laptops, etc., are all operated using semiconductor components like diodes, transistors and integrated chips.Regional Outlook
Region-wise, the tunnel field effect transistor market is analyzed across North America, Europe, Asia Pacific, and LAMEA. The Asia-Pacific region led the tunnel field effect transistor market by generating the maximum revenue share in 2021. This is due to the recent innovation and surge in market demands. There is an extensive development of manufacturing units, increased R&D, and government supports in developed nations in the region. The rising economy, and cost-effective labor, along with the incorporation of advanced technology has led to the growth of the electronic industry. All these factors, combined with the availability of raw materials and equipment, are boosting the market in the region.The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Texas Instruments, Inc., Infineon Technologies AG, ON Semiconductor Corporation, Broadcom, Inc., STMicroelectronics N.V., Advanced Linear Devices, Inc., Axcera, Inc., and Focus Microwaves, Inc.
Scope of the Study
Market Segments Covered in the Report:
By End User
- Consumer Electronics
- Automotive
- Industrial
- Aerospace & Defense
- Others
By Product Type
- Lateral Tunneling
- Vertical Tunneling
By Geography
North America
- US
- Canada
- Mexico
- Rest of North America
Europe
- Germany
- UK
- France
- Russia
- Spain
- Italy
- Rest of Europe
Asia Pacific
- China
- Japan
- India
- South Korea
- Singapore
- Malaysia
- Rest of Asia Pacific
LAMEA
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA
Key Market Players
List of Companies Profiled in the Report:
- Qorvo, Inc
- Texas Instruments, Inc
- Infineon Technologies AG
- ON Semiconductor Corporation
- Broadcom, Inc
- STMicroelectronics N.V
- Advanced Linear Devices, Inc
- Axcera, Inc
- Focus Microwaves, Inc
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Table of Contents
Chapter 1. Market Scope & Methodology1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 Global Tunnel Field Effect Transistor Market, by End User
1.4.2 Global Tunnel Field Effect Transistor Market, by Product Type
1.4.3 Global Tunnel Field Effect Transistor Market, by Geography
1.5 Methodology for the research
Chapter 2. Market Overview
2.1 Introduction
2.1.1 Overview
2.1.1.1 Market composition and Scenarios
2.2 Key Factors Impacting the Market
2.2.1 Market Drivers
2.2.2 Market Restraints
Chapter 3. Global Tunnel Field Effect Transistor Market by End User
3.1 Global Consumer Electronics Market by Region
3.2 Global Automotive Market by Region
3.3 Global Industrial Market by Region
3.4 Global Aerospace & Defense Market by Region
3.5 Global Others Market by Region
Chapter 4. Global Tunnel Field Effect Transistor Market by Product Type
4.1 Global Lateral Tunneling Market by Region
4.2 Global Vertical Tunneling Market by Region
Chapter 5. Global Tunnel Field Effect Transistor Market by Region
5.1 North America Tunnel Field Effect Transistor Market
5.1.1 North America Tunnel Field Effect Transistor Market by End User
5.1.1.1 North America Consumer Electronics Market by Country
5.1.1.2 North America Automotive Market by Country
5.1.1.3 North America Industrial Market by Country
5.1.1.4 North America Aerospace & Defense Market by Country
5.1.1.5 North America Others Market by Country
5.1.2 North America Tunnel Field Effect Transistor Market by Product Type
5.1.2.1 North America Lateral Tunneling Market by Country
5.1.2.2 North America Vertical Tunneling Market by Country
5.1.3 North America Tunnel Field Effect Transistor Market by Country
5.1.3.1 US Tunnel Field Effect Transistor Market
5.1.3.1.1 US Tunnel Field Effect Transistor Market by End User
5.1.3.1.2 US Tunnel Field Effect Transistor Market by Product Type
5.1.3.2 Canada Tunnel Field Effect Transistor Market
5.1.3.2.1 Canada Tunnel Field Effect Transistor Market by End User
5.1.3.2.2 Canada Tunnel Field Effect Transistor Market by Product Type
5.1.3.3 Mexico Tunnel Field Effect Transistor Market
5.1.3.3.1 Mexico Tunnel Field Effect Transistor Market by End User
5.1.3.3.2 Mexico Tunnel Field Effect Transistor Market by Product Type
5.1.3.4 Rest of North America Tunnel Field Effect Transistor Market
5.1.3.4.1 Rest of North America Tunnel Field Effect Transistor Market by End User
5.1.3.4.2 Rest of North America Tunnel Field Effect Transistor Market by Product Type
5.2 Europe Tunnel Field Effect Transistor Market
5.2.1 Europe Tunnel Field Effect Transistor Market by End User
5.2.1.1 Europe Consumer Electronics Market by Country
5.2.1.2 Europe Automotive Market by Country
5.2.1.3 Europe Industrial Market by Country
5.2.1.4 Europe Aerospace & Defense Market by Country
5.2.1.5 Europe Others Market by Country
5.2.2 Europe Tunnel Field Effect Transistor Market by Product Type
5.2.2.1 Europe Lateral Tunneling Market by Country
5.2.2.2 Europe Vertical Tunneling Market by Country
5.2.3 Europe Tunnel Field Effect Transistor Market by Country
5.2.3.1 Germany Tunnel Field Effect Transistor Market
5.2.3.1.1 Germany Tunnel Field Effect Transistor Market by End User
5.2.3.1.2 Germany Tunnel Field Effect Transistor Market by Product Type
5.2.3.2 UK Tunnel Field Effect Transistor Market
5.2.3.2.1 UK Tunnel Field Effect Transistor Market by End User
5.2.3.2.2 UK Tunnel Field Effect Transistor Market by Product Type
5.2.3.3 France Tunnel Field Effect Transistor Market
5.2.3.3.1 France Tunnel Field Effect Transistor Market by End User
5.2.3.3.2 France Tunnel Field Effect Transistor Market by Product Type
5.2.3.4 Russia Tunnel Field Effect Transistor Market
5.2.3.4.1 Russia Tunnel Field Effect Transistor Market by End User
5.2.3.4.2 Russia Tunnel Field Effect Transistor Market by Product Type
5.2.3.5 Spain Tunnel Field Effect Transistor Market
5.2.3.5.1 Spain Tunnel Field Effect Transistor Market by End User
5.2.3.5.2 Spain Tunnel Field Effect Transistor Market by Product Type
5.2.3.6 Italy Tunnel Field Effect Transistor Market
5.2.3.6.1 Italy Tunnel Field Effect Transistor Market by End User
5.2.3.6.2 Italy Tunnel Field Effect Transistor Market by Product Type
5.2.3.7 Rest of Europe Tunnel Field Effect Transistor Market
5.2.3.7.1 Rest of Europe Tunnel Field Effect Transistor Market by End User
5.2.3.7.2 Rest of Europe Tunnel Field Effect Transistor Market by Product Type
5.3 Asia Pacific Tunnel Field Effect Transistor Market
5.3.1 Asia Pacific Tunnel Field Effect Transistor Market by End User
5.3.1.1 Asia Pacific Consumer Electronics Market by Country
5.3.1.2 Asia Pacific Automotive Market by Country
5.3.1.3 Asia Pacific Industrial Market by Country
5.3.1.4 Asia Pacific Aerospace & Defense Market by Country
5.3.1.5 Asia Pacific Others Market by Country
5.3.2 Asia Pacific Tunnel Field Effect Transistor Market by Product Type
5.3.2.1 Asia Pacific Lateral Tunneling Market by Country
5.3.2.2 Asia Pacific Vertical Tunneling Market by Country
5.3.3 Asia Pacific Tunnel Field Effect Transistor Market by Country
5.3.3.1 China Tunnel Field Effect Transistor Market
5.3.3.1.1 China Tunnel Field Effect Transistor Market by End User
5.3.3.1.2 China Tunnel Field Effect Transistor Market by Product Type
5.3.3.2 Japan Tunnel Field Effect Transistor Market
5.3.3.2.1 Japan Tunnel Field Effect Transistor Market by End User
5.3.3.2.2 Japan Tunnel Field Effect Transistor Market by Product Type
5.3.3.3 India Tunnel Field Effect Transistor Market
5.3.3.3.1 India Tunnel Field Effect Transistor Market by End User
5.3.3.3.2 India Tunnel Field Effect Transistor Market by Product Type
5.3.3.4 South Korea Tunnel Field Effect Transistor Market
5.3.3.4.1 South Korea Tunnel Field Effect Transistor Market by End User
5.3.3.4.2 South Korea Tunnel Field Effect Transistor Market by Product Type
5.3.3.5 Singapore Tunnel Field Effect Transistor Market
5.3.3.5.1 Singapore Tunnel Field Effect Transistor Market by End User
5.3.3.5.2 Singapore Tunnel Field Effect Transistor Market by Product Type
5.3.3.6 Malaysia Tunnel Field Effect Transistor Market
5.3.3.6.1 Malaysia Tunnel Field Effect Transistor Market by End User
5.3.3.6.2 Malaysia Tunnel Field Effect Transistor Market by Product Type
5.3.3.7 Rest of Asia Pacific Tunnel Field Effect Transistor Market
5.3.3.7.1 Rest of Asia Pacific Tunnel Field Effect Transistor Market by End User
5.3.3.7.2 Rest of Asia Pacific Tunnel Field Effect Transistor Market by Product Type
5.4 LAMEA Tunnel Field Effect Transistor Market
5.4.1 LAMEA Tunnel Field Effect Transistor Market by End User
5.4.1.1 LAMEA Consumer Electronics Market by Country
5.4.1.2 LAMEA Automotive Market by Country
5.4.1.3 LAMEA Industrial Market by Country
5.4.1.4 LAMEA Aerospace & Defense Market by Country
5.4.1.5 LAMEA Others Market by Country
5.4.2 LAMEA Tunnel Field Effect Transistor Market by Product Type
5.4.2.1 LAMEA Lateral Tunneling Market by Country
5.4.2.2 LAMEA Vertical Tunneling Market by Country
5.4.3 LAMEA Tunnel Field Effect Transistor Market by Country
5.4.3.1 Brazil Tunnel Field Effect Transistor Market
5.4.3.1.1 Brazil Tunnel Field Effect Transistor Market by End User
5.4.3.1.2 Brazil Tunnel Field Effect Transistor Market by Product Type
5.4.3.2 Argentina Tunnel Field Effect Transistor Market
5.4.3.2.1 Argentina Tunnel Field Effect Transistor Market by End User
5.4.3.2.2 Argentina Tunnel Field Effect Transistor Market by Product Type
5.4.3.3 UAE Tunnel Field Effect Transistor Market
5.4.3.3.1 UAE Tunnel Field Effect Transistor Market by End User
5.4.3.3.2 UAE Tunnel Field Effect Transistor Market by Product Type
5.4.3.4 Saudi Arabia Tunnel Field Effect Transistor Market
5.4.3.4.1 Saudi Arabia Tunnel Field Effect Transistor Market by End User
5.4.3.4.2 Saudi Arabia Tunnel Field Effect Transistor Market by Product Type
5.4.3.5 South Africa Tunnel Field Effect Transistor Market
5.4.3.5.1 South Africa Tunnel Field Effect Transistor Market by End User
5.4.3.5.2 South Africa Tunnel Field Effect Transistor Market by Product Type
5.4.3.6 Nigeria Tunnel Field Effect Transistor Market
5.4.3.6.1 Nigeria Tunnel Field Effect Transistor Market by End User
5.4.3.6.2 Nigeria Tunnel Field Effect Transistor Market by Product Type
5.4.3.7 Rest of LAMEA Tunnel Field Effect Transistor Market
5.4.3.7.1 Rest of LAMEA Tunnel Field Effect Transistor Market by End User
5.4.3.7.2 Rest of LAMEA Tunnel Field Effect Transistor Market by Product Type
Chapter 6. Company Profiles
6.1 Qorvo, Inc.
6.1.1 Company Overview
6.1.2 Financial Analysis
6.1.3 Segmental and Regional Analysis
6.1.4 Research & Development Expenses
6.2 Texas Instruments, Inc.
6.2.1 Company Overview
6.2.2 Financial Analysis
6.2.3 Segmental and Regional Analysis
6.2.4 Research & Development Expense
6.3 Infineon Technologies AG
6.3.1 Company Overview
6.3.2 Financial Analysis
6.3.3 Segmental and Regional Analysis
6.3.4 Research & Development Expense
6.4 ON Semiconductor Corporation
6.4.1 Company Overview
6.4.2 Financial Analysis
6.4.3 Segmental and Regional Analysis
6.4.4 Research & Development Expense
6.5 Broadcom, Inc.
6.5.1 Company Overview
6.5.2 Financial Analysis
6.5.3 Segmental and Regional Analysis
6.5.4 Research & Development Expense
6.6 STMicroelectronics N.V.
6.6.1 Company Overview
6.6.2 Financial Analysis
6.6.3 Segmental and Regional Analysis
6.6.4 Research & Development Expense
6.7 Advanced Linear Devices, Inc.
6.7.1 Company Overview
6.8 Axcera, Inc.
6.8.1 Company Overview
6.9 Focus Microwaves, Inc.
6.9.1 Company Overview
Companies Mentioned
- Qorvo, Inc.
- Texas Instruments, Inc.
- Infineon Technologies AG
- ON Semiconductor Corporation
- Broadcom, Inc.
- STMicroelectronics N.V.
- Advanced Linear Devices, Inc.
- Axcera, Inc.
- Focus Microwaves, Inc.
Methodology
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Table Information
| Report Attribute | Details |
|---|---|
| No. of Pages | 163 |
| Published | January 2023 |
| Forecast Period | 2021 - 2028 |
| Estimated Market Value ( USD | $ 853.5 Million |
| Forecasted Market Value ( USD | $ 1614.9 Million |
| Compound Annual Growth Rate | 9.8% |
| Regions Covered | Global |
| No. of Companies Mentioned | 9 |
