Solid State & Microelectronics Technology is a comprehensive textbook designed for courses in solid state device physics as part of electronics / electrical engineering and IT courses. The book has two main objectives aimed at students and the future engineer: 1) to deliver knowledge of quantum physics and 2) to familiarize them with modern device types and fabrication processes. The breadth of subjects covered in the book serves a useful integrative function in combining fundamental science with applications. Recent developments are illustrated thoughtfully to encourage the reader to adopt this field as their research area.
Key features
- Adopts a twin approach to learning about solid state devices by blending information about fundamental science with the latest fabrication technology
- Covers topics recently introduced into current curricula to cater to the demands of modern engineering
- Provides foundational information on quantum physics, semiconductors and electronics
- Provides details about advanced devices such as BiCMOS, MESFET and FinFet devices
- Encourages readers to pursue further research with detailed illustrations and references
Table of Contents
Chapter 1 Classification, Crystal Structure and Miller Indices of Semiconducting Materials
- Basic Quantum Mechanics for Semiconductors
- Sommerfeld’S Free Electron Model
- Kronig - Penney Model: the Origin of the Band Gap
- Bloch’S Theory: Electrons in Three-Dimensional Periodic Potential and Band Structure
- Band Structure of Face-Centered Cubic Crystals
- Band, Number of States in a Band, Band Filling
- Direct and Indirect Band Gap Semiconductor
- Intrinsic Semiconductor: Density of States, Fermi - Dirac Statistics and Fermi Energy
- Extrinsic Semiconductor
- Carrier’S Characteristics: Charge, Effective Mass
- Carrier Transport Parameters: Drift, Mobility, Carrier Lifetime, Scattering
- Charge Carrier Under Electric Field: Boltzmann Transport Equation
- Charge Carrier Transport Due to Concentration Gradient: Diffusion
- Hall Effect: Determination of Type Carrier and Its Density
- Conclusion
- Questions
- References
Chapter 2 Fundamentals of P - N Junction
- Introduction
- Physics of P - N Diode: Depletion Region, Built - in -Potential
- Current-Voltage Characteristics of Biased P - N Junction
- Zero Biased Condition (𝐕𝐃 = 𝟎𝐕)
- Forward Biased Condition (𝐕𝐃 > 𝟎 𝐕)
- Reverse Biased Condition (𝐕𝐃 < 𝟎 𝐕)
- Contact for P - N Diode: Choice of Suitable Material
- Resistance of P - N Diode: Static, Dynamic, and Average Ac Resistance
- Piecewise-Linear Analysis of Diode Characteristic
- Capacitance of P - N Junction Under the Reverse Biased Condition: Transition Capacitance
- Capacitance of P - N Junction Under the Forward Biased Condition: Diffusion Capacitance
- Break Down of Reverse Biased P - N Junction: Avalanche and Zener Mechanism
- Diode Switching
- Conclusion
- Questions
- References
Chapter 3 Metal Semiconductor Contacts Schottky Diodes
- Introduction
- Metal-Semiconductor Junction
- Metal Semiconductor Junction
- Conclusion
- Width of the Depletion Region in a Schottky Barrier Device
- Ideality Factor
- Metal Semiconductor/Schottky Diode
- Conclusion
- Review Questions
- References
Chapter 4 Junction Field Effect Transistor
- Introduction
- Fet Fundamentals
- The Field Effect Transistor (Fet) Can Be Broadly Classified into the Following Categories
- Constructional Features of N- Channel Jfet
- Midpoint Bias
- Ideal Current-Voltage Relationship
- Short Answer Type Questions
- Fill in the Blanks
- True/False
- References
Chapter 5 Metal Oxide Field Effect Transistor (Mosfet)
- Introduction
- Mos Diode
- Fabrication of N-Mos
- Selection of Substrate
- Deposition of Photoresist
- Lithography
- Window Formation
- Deposition of the Gate Oxide and Polysilicon
- Formation of N+ Region and Metal Contact
- Observation
- Polysilicon
- The Ideal Mos Capacitor
- Flat Band
- Ideal Mos Diode Threshold Voltage Vt
- Long Channel Mosfet
- Questions
- Conclusion
- References
Chapter 6 Semiconductor Devices.
- Introduction
- Pin Diode
- Microwave Switches
- Photodetector
- Tunnel Diode (Esaki Diode)
- Conclusion
- Review Questions
- References
Chapter 7 Silicon
- Introduction
- Crystal Systems
- Crystal Systems and Miller Indices
- Types of Crystal Structures
- Face-Centred Cubic Crystal Structure
- Conclusion
- Points to Remember
- Review Questions
- References
Chapter 8 Oxidation
- Introduction
- Thermal Oxidation
- Growth Mechanism and Kinetics of Oxidation
- Thin Oxide Growth
- Properties of Oxides Oxide-Induced Defects
- Characterization of Oxide Films
- Conclusion
- Points to Remember
- Review Questions
- References
Chapter 9 Diffusion
- Introduction
- Mechanisms of Diffusion
- Interstitial Diffusion
- Vacancy Diffusion
- Steady-State Diffusion and Diffusion Flux
- Diffusion in Semiconducting Materials
- Conclusion
- Points to Remember
- Review Questions
- References
Chapter 10 ION Implantation
- Introduction
- Range Theory Ion Stopping
- Damage
- Channeling
- Recoils
- Instrumentation
- Conclusion
- Points to Remember
- Review Questions
- References
Chapter 11 MEMS in Improved Efficiency
- Introduction
- Mems Materials
- Ceramic Material Fabrication Process
- Fabrication Method - Micromachining
- Conclusion
- Review Questions
- References
Chapter 12 Litgography
- Introduction
- Optical Lithography
- Types of Photoresists: the Negative and Positive Photoresists
- Photolithography Process
- Some Advanced Lithographic Techniques
- Conclusion
- Review Questions
- References
- Subject Index
Author
- Sunipa Roy
- Sayan Dey
- Chandan Jumar Ghos
