Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references.
The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption.
The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption.
Key Features:
- Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner.
- In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors.
- Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries.
- References: Chapters include references that encourage advanced readers to further explore key topics.
Readership
Students, academics and advanced readersTable of Contents
- Contents
- Preface
- Acknowledgements
- List of Contributors
- Effect Transistors
- Chandra Keerthi Pothina, J. Lakshmi Prasanna, M. Ravi Kumar and Chella
- Santhosh
- Introduction
- Role of 2D Nanomaterials or Nanosheets in Semiconductor Fets
- Single Layer Mos2 Field Effect Transistors
- Two-Dimensional Indium-Selenide Field-Effect Transistors
- Role of One-Dimensional Nanomaterials in Semiconductor Fets
- Nanowires and Their Role in Field Effect Transistors
- Gate All Around and Multi-Bridge Channel Field Effect Transistors
- Carbon Nanotubes and Carbon Nanotube Field Effect Transistors
- Back Gated Cntfet
- Top Gated Cntfet
- Wrap Around or Gate All Around Cntfet
- Suspended Cntfets
- Role of Zero Dimensional Nanomaterials in Semiconductor Fets
- Quantum Dots
- Working of Quantum Dots
- Quantum Dots in Field Effect Transistors
- Light Emitting Field Effect Transistor
- Quantum Dot Gate Field Effect Transistor
- Analysis of Thermal Transport in a Nanoscale Transistor Using Lattice Boltzmann Method
- Boundary Condition
- Conclusion
- References
- Double Gate, Triple Gate, and Gaa Fets
- Jyoti Kandpal and Ekta Goel
- Introduction
- History of I.C.
- Moore's First Law
- Moore's Second Law
- Moore's Law in the Future
- Moore's Law’S Applications
- Type of Planar Technology
- Complementary Metal Oxide Semiconductor (Cmos)
- Structure for Soi-Based Mosfets
- Double Gate (D.G.) Mosfet Technology
- Fin Field Effect Transistor (Finfet)
- Nano Transistor
- Nanowire (Nw) Transistors
- Cntfet
- Graphene Nanoribbon (Gnr) Transistor
- Single-Electron Transistors (Sets)
- Quantum-Dot Cellular Automata (Qca)
- Tri-Gate Structure
- Pi Gate
- Gate All Around (Gaa) Fet
- Omega Fet
- Applications of Field Effect Transistor (Fet)
- Challenges
- Conclusion
- Acknowledgement
- References
- Savitesh Madhulika Sharma and Avtar Singh
- Introduction
- Classification of the Finfets
- Based on Number of Gates
- Based on Number of Terminals
- Tied Gate (Tg) Finfet
- Independent Gate (Ig) Finfet
- Based on Bulk Oxide
- Bulk Finfet
- Soi Finfet
- Based on Symmetricity
- Symmetric Finfet
- Asymmetric Finfet
- Device Physics
- Fabrication of Finfets
- Finfet Modeling
- Characterization of Finfet
- Design Challenges and Reliability Issues
- Finfet’S Shape of Fin
- Doping Concentration
- Integration of the Finfets
- Parasitic Capacitances
- Orientation of Fins
- Reliability of Finfets
- Variability of Fin Dimensions
- Strain Engineering
- Performance Improvement Engineering Techniques
- Structural Variations
- Body Thickness
- Oxide Thickness
- Implant Energy
- Gate Stack
- Circuit Applications
- Inverter
- Sram
- Flash Memory
- Reference Voltage Circuit
- Concluding Remarks
- References
- Sarita Yadav, Nitanshu Chauhan, Shobhit Tyagi, Arvind Sharma, Shashank
- Banchhor, Rajiv Joshi, Rajendra Pratap and Bulusu Anand
- Introduction
- Supply Voltage Scaling
- Voltage Scaling in Nanoscale Devices
- Experimental Setup
- Minimum Supply Voltage Model
- Development of Mathematical I-V Relationship for Sub-100Mv Biases for Finfets
- Dependence of Temperature on Empirical Parameters
- Estimation of Limit on Vdd for Inverter
- Derivation of Limit of Minimum Supply Voltage for Nand Gate
- Conclusion
- References
- Neetu Joshi
- Nature of Work
- Introduction
- Properties of Graphene
- Optical Properties
- Electronic Properties
- Terahertz Properties of Graphene
- Plasmonics
- Surface Plasmons
- Graphene Field-Effect Transistors
- Design and Modeling
- Characterization and Fabrication Developments and Challenges
- Characterization
- Fabrication
- Electron Beam Lithography
- Source and Drain Metal Contacts
- High-K Material Deposition by Ald Method
- Gate Electrode
- Applications in Biosensing and High Frequencies
- Mixers
- Modeling
- Drift Diffusion Carrier Transport
- Conclusion and Future Scope
- References
- Transition in Ncfet and Guidelines for Analog Circuit Designing
- Nitanshu Chauhan, Sudeb Dasgupta and Anand Bulusu
- Introduction
- Ncfet Architectures
- Metal-Ferro-Metal-Insulator-Semiconductor (Mfmis) Fet
- Metal-Ferro-Insulator-Semiconductor (Mfis) Fet
- Voltage Amplification and Sub-Threshold Swing of Ncfet
- Device Structure and Tcad Models Calibration
- Negative to Positive Differential Conductance Transition in Nc
- Fdsoi
- Physical Insight of Ndc to Pdc Transition
- Impact of Back Bias on Ndc to Pdc Transition
- Impact of Interface Trap Charge on Ndc to Pdc Transition
- Circuit Designing Using Ndc to Pdc Transition
- Designing of Single Stage Common Source Amplifier
- Current Mirror Realization
- Impact of Gate Length Variation on Amplifier Gain
- Conclusion
- References
- (Sg-Set) Based Hybrid Setmos Logic
- Raj Shah and Rasika Dhavse
- Introduction
- Sg-Set Design and Simulation
- Novel Hybrid Setmos Technique
- Results and Discussion
- Thermal Analysis of the Proposed Hybrid Setmos
- Concluding Remarks
- Acknowledgements
- References
- Cmos-Based Sram
- Dharmendra Singh Yadav, Prabhat Singh, Vibhash Choudhary and Rakesh Murthy
- Gangadari
- Introduction
- Various Topologies of Sram and Its Operation
- 6T Sram and Its Operation
- Hold Mode
- Read Mode
- Write Mode
- 8T Sram and Its Operation
- Hold Mode
- Read Mode
- Write Mode
- 10T Sram and Its Operation
- 12T Sram and Its Operation
- Read Delay Calculation and Its Comparison
- Write Delay Calculation and Its Comparison
- Average Power Dissipation
- Analysis of Static Noise Margin
- Hold Static Noise Margin (Snmh)
- Read Static Noise Margin (Snmr)
- Write Static Noise Margin (Snmw)
- Conclusion
- References
- Leakage Power in Modern Vlsi
Author
- Ekta Goel
- Archana Pandey
