Revolutionary trends in the semiconductor industry continue to reshape the landscape of power electronics as the demand for Insulated Gate Bipolar Transistors (IGBT) and Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFET) skyrockets worldwide. According to the latest market analysis by the publisher, the global IGBT and SJ MOSFET market, which reached a commendable US$ 5 billion in 2024, is forecasted to surge at a remarkable Compound Annual Growth Rate (CAGR) of 20.0% through 2031, reaching a valuation of US$ 18 billion.
Furthermore, the growing importance of electrical equipment and machinery, alongside the rapid transition towards electric vehicles, is contributing substantially to the expansion of the IGBT and SJ MOSFET market. As these trends continue to unfold, the market is witnessing an unprecedented surge in demand, particularly in applications spanning from Uninterruptible Power Supplies (UPS) to wind turbines and photovoltaic inverters.
On the other hand, Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFETs) have become the industry standard in high-voltage switching converters, owing to their unparalleled efficiency in switching operations at various frequencies.
This product will be delivered within 1-3 business days.
Driving Forces of Market Growth
The surge in demand for IGBT and SJ MOSFET is underpinned by a myriad of factors, including the burgeoning adoption of automated switching devices across various sectors. Additionally, the global shift towards renewable energy sources such as wind and solar power is a significant catalyst, further propelled by escalating green initiatives aimed at curbing power losses and enhancing energy efficiency.Furthermore, the growing importance of electrical equipment and machinery, alongside the rapid transition towards electric vehicles, is contributing substantially to the expansion of the IGBT and SJ MOSFET market. As these trends continue to unfold, the market is witnessing an unprecedented surge in demand, particularly in applications spanning from Uninterruptible Power Supplies (UPS) to wind turbines and photovoltaic inverters.
Unraveling the Dynamics of IGBT and SJ MOSFET
IGBT and SJ MOSFET stand at the forefront of modern electronic circuits, serving as indispensable voltage-controlled devices. Insulated Gate Bipolar Transistors (IGBTs), renowned for their efficiency and fast switching capabilities, have emerged as a preferred choice across a myriad of applications, blending the advantages of bipolar transistors and MOSFETs.On the other hand, Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFETs) have become the industry standard in high-voltage switching converters, owing to their unparalleled efficiency in switching operations at various frequencies.
Country-wise Insights:
United States:
The United States is anticipated to maintain its dominance in the global IGBT and Junction MOSFET market, driven by factors such as increased adoption of consumer and home appliances, investments in wind energy projects, and a focus on higher energy efficiency. Additionally, the presence of leading manufacturers developing advanced solutions further contributes to market expansion.United Kingdom:
Similarly, the United Kingdom presents a lucrative market for IGBT and super junction MOSFETs, with rapid growth expected in the automotive industry's electrification and the demand for inverters. The country boasts a high presence of companies offering advanced solutions, supporting market growth.Japan:
In Japan, the demand for IGBT and super junction MOSFETs is rising rapidly, primarily fueled by the production and sales of electric vehicles. Japan-based companies are introducing innovative products to meet this increasing demand, catering to various applications such as photovoltaic power conditioners, data centers, and industrial settings.Category-wise Analysis and Application Trends
Within the market, IGBT remains the most sought-after product type, expected to grow at a robust CAGR of 18.1%. The application spectrum of IGBT and SJ MOSFET spans across various sectors, with UPSs and wind turbines emerging as top consumers. The rising adoption of UPS across industrial, commercial, and residential sectors, coupled with increasing investments in wind energy projects, is fueling the demand for these advanced semiconductor solutions.Competitive Landscape
Key players in the global IGBT and SJ MOSFET market include Toshiba Corporation, Mitsubishi Electric Corporation, Semikron Elektronik GmbH & Co. KG, Fuji Electric Co Ltd, STMicroelectronics N.V., Vishay Intertechnology Inc., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Onsemi, and ABB Ltd. These industry leaders are continuously innovating and introducing advanced solutions to meet the evolving demands of end-users across diverse sectors.Global IGBT and Super Junction MOSFET Market Segmentation:
By Product Type:
- IGBT
- Discrete IGBT
- IGBT module
- SJMOSFET
- Discrete Super Junction MOSFET
- Super Junction MOSFET Module
By Applications:
- IGBT
- UPS
- Wind Turbines
- PV Inverters
- Rail Traction
- Consumer Applications
- EV/HEV
- SJMOSFET
- UPS
- Wind Turbines
- PV Inverters
- Rail Traction
- Consumer Applications
- EV/HEV
- Motor Drives
- Industrial Applications
- Converters/ Adapters /Chargers
- Lighting
- Others (Servers, Networking Equipment etc.)
By Region:
- North America
- Europe
- Asia Pacific
- Latin America
- Middle East & Africa
This product will be delivered within 1-3 business days.
Table of Contents
1. Executive Summary
2. Market Overview
3. Global IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
4. North America IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
5. Europe IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
6. Asia Pacific IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
7. Latin America IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
8. Middle East & Africa IGBT and Super Junction MOSFET Market Outlook, 2018 - 2031
9. Competitive Landscape
10. Appendix
Companies Mentioned
- Infineon Technologies AG
- Vishay Intertechnology Inc.
- Mitsubishi Electric Corporation
- STMicroelectronics N.V.
- Fuji Electric Co. Ltd.
- Toshiba Corporation
- Hitachi Power Semiconductor Device Ltd.
- Onsemi
- Semikron Elektronik GmbH & Co. KG
- ABB Ltd.
Methodology
LOADING...