+353-1-416-8900REST OF WORLD
+44-20-3973-8888REST OF WORLD
1-917-300-0470EAST COAST U.S
1-800-526-8630U.S. (TOLL FREE)

Principles of Plasma Discharges and Materials Processing. Edition No. 3

  • Book

  • 832 Pages
  • August 2024
  • John Wiley and Sons Ltd
  • ID: 5969590
A new edition of this industry classic on the principles of plasma processing

Plasma-based technology and materials processes have been central to the revolution of the last half-century in micro- and nano-electronics. From anisotropic plasma etching on microprocessors, memory, and analog chips, to plasma deposition for creating solar panels and flat-panel displays, plasma-based materials processes have reached huge areas of technology. As key technologies scale down in size from the nano- to the atomic level, further developments in plasma materials processing will only become more essential.

Principles of Plasma Discharges and Materials Processing is the foundational introduction to the subject. It offers detailed information and procedures for designing plasma-based equipment and analyzing plasma-based processes, with an emphasis on the abiding fundamentals. Now fully updated to reflect the latest research and data, it promises to continue as an indispensable resource for graduate students and industry professionals in a myriad of technological fields.

Readers of the third edition of Principles of Plasma Discharges and Materials Processing will also find: - Extensive figures and tables to facilitate understanding - A new chapter covering the recent development of processes involving high-pressure capacitive discharges - New subsections on discharge and processing chemistry, physics, and diagnostics

Principles of Plasma Discharges and Materials Processing is ideal for professionals and process engineers in the field of plasma-assisted materials processing with experience in the field of science or engineering. It is the premiere world-wide basic text for graduate courses in the field.

Table of Contents

List of Figures xxi

List of Tables xlv

Preface to Third Edition xlvii

Preface to Second Edition xlix

Preface to the First Edition li

Symbols, Abbreviations, and Acronyms Iv

1 Introduction 1

1.1 Materials Processing 1

1.2 Plasmas and Sheaths 5

1.3 Discharges 12

1.4 Symbols and Units 20

2 Basic Plasma Equations and Equilibrium 21

2.1 Introduction 21

2.2 Field Equations, Current, and Voltage 22

2.3 The Conservation Equations 25

2.4 Equilibrium Properties 30

Problems 34

3 Atomic Collisions 37

3.1 Basic Concepts 37

3.2 Collision Dynamics 42

3.3 Elastic Scattering 46

3.4 Inelastic Collisions 53

3.5 Averaging Over Distributions and Surface Effects 64

Problems 68

4 Plasma Dynamics 73

4.1 Basic Motions 73

4.2 Nonmagnetized Plasma Dynamics 77

4.3 Guiding Center Motion 84

4.4 Dynamics of Magnetized Plasmas 90

4.5 Waves in Magnetized Plasmas 93

4.6 Microwave and RF Field Diagnostics 100

Problems 107

5 Diffusion and Transport 111

5.1 Basic Relations 111

5.2 Diffusion Solutions 113

5.3 Low-Pressure Solutions 119

5.4 Diffusion Across a Magnetic Field 123

5.5 Magnetic Multipole Confinement 129

Problems 133

6 dc Sheaths 137

6.1 Basic Concepts and Equations 137

6.2 The Bohm Sheath Criterion 139

6.3 The High-Voltage Sheath 145

6.4 Generalized Criteria for Sheath Formation 147

6.5 High-Voltage Collisional Sheaths 152

6.6 Electrostatic Probe Diagnostics 153

Problems 167

7 Chemical Reactions and Equilibrium 171

7.1 Introduction 171

7.2 Energy and Enthalpy 172

7.3 Entropy and Gibbs Free Energy 179

7.4 Chemical Equilibrium 184

7.5 Heterogeneous Equilibrium 187

Problems 191

8 Molecular Collisions 195

8.1 Introduction 195

8.2 Molecular Structure 195

8.3 Electron Collisions with Molecules 202

8.4 Heavy-Particle Collisions 211

8.5 Reaction Rates and Detailed Balancing 221

8.6 Optical Emission and Actinometry 229

Problems 237

9 Chemical Kinetics and Surface Processes 243

9.1 Elementary Reactions 243

9.2 Gas-Phase Kinetics 246

9.3 Surface Processes 253

9.4 Surface Kinetics 263

9.5 Showerhead Gas Flow 270

Problems 273

10 Particle and Energy Balance in Discharges 279

10.1 Introduction 279

10.2 Electropositive Plasma Equilibrium 281

10.3 Electronegative Plasma Equilibrium 289

10.4 Approximate Electronegative Equilibria 297

10.5 Electronegative Discharge Experiments and Simulations 304

10.6 Pulsed Discharges 313

Problems 324

11 Low-Pressure Capacitive Discharges 329

11.1 Homogeneous Model 330

11.2 Inhomogeneous Model 340

11.3 Experiments and Simulations 353

11.4 Asymmetric Discharges 365

11.5 Voltage-Driven Sheaths and Series Resonance 369

11.6 Multi-frequency Capacitive Discharges 372

11.7 Standing Wave and Skin Effects 383

11.8 Low-Frequency Sheaths 391

11.9 Ion-Bombarding Energy at Electrodes 394

11.10 Magnetically Enhanced Discharges 401

11.11 Matching Networks and Power Measurements 406

Problems 410

12 Inductive Discharges 415

12.1 High-Density, Low-Pressure Discharges 415

12.2 Other Operating Regimes 422

12.3 Planar Coil Configuration 430

12.4 High-Efficiency Planar Discharges 436

Problems 441

13 Wave-Heated Discharges 445

13.1 Electron Cyclotron Resonance Discharges 445

13.2 Helicon Discharges 464

13.3 Surface Wave Discharges 473

Problems 477

14 dc Discharges 479

14.1 Qualitative Characteristics of Glow Discharges 479

14.2 Analysis of the Positive Column 482

14.3 Analysis of the Cathode Region 485

14.4 Hollow Cathode Discharges 492

14.5 Planar Magnetron Discharges 498

14.6 Ionized Physical Vapor Deposition 507

Problems 510

15 High-Pressure Capacitive Discharges 513

15.1 Introduction 513

15.2 Intermediate Pressure RF Discharges 514

15.3 Alpha-to-Gamma (α-γ) Transition 524

15.4 Atmospheric Pressure RF Discharges 534

15.5 Atmospheric Pressure Low-Frequency Discharges 548

Problems 556

16 Etching 561

16.1 Etch Requirements and Processes 561

16.2 Etching Kinetics 568

16.3 Halogen Atom Etching of Silicon 575

16.4 Other Etch Systems 588

16.5 Atomic Layer Etching (ALE) 595

16.6 Substrate Charging 608

Problems 616

17 Deposition and Implantation 619

17.1 Introduction 619

17.2 Plasma-Enhanced Chemical Vapor Deposition 621

17.3 Atomic Layer Deposition 628

17.4 Sputter Deposition 636

17.5 Plasma-Immersion Ion Implantation 640

Problems 651

18 Dusty Plasmas 655

18.1 Qualitative Description of Phenomena 655

18.2 Particle Charging and Discharge Equilibrium 656

18.3 Particulate Equilibrium 662

18.4 Formation and Growth of Dust Grains 665

18.5 Physical Phenomena and Diagnostics 670

18.6 Removal or Production of Particulates 675

Problems 677

19 Kinetic Theory of Discharges 681

19.1 Basic Concepts 681

19.2 Local Kinetics 690

19.3 Nonlocal Kinetics 693

19.4 Quasilinear Diffusion and Stochastic Heating 697

19.5 Energy Diffusion in a Skin Depth Layer 703

19.6 Kinetic Modeling of Discharges 707

Problems 714

Appendix A Collision Dynamics 717

A.1 Coulomb Cross Section 718

Appendix B The Collision Integral 721

B.1 Boltzmann Collision Integral 721

B.2 Maxwellian Distribution 722

Appendix C Diffusion Solutions for Variable Mobility Model 723

References 727

Index 749

Authors

Michael A. Lieberman University of California, Berkeley. Allan J. Lichtenberg University of California, Berkeley.