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Oxide Thin Film Transistors. Edition No. 1

  • Book

  • 240 Pages
  • November 2024
  • John Wiley and Sons Ltd
  • ID: 5997269
Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies

Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications.

Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits.

Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on: - Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignment- Device physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performance- Fabrication processes, covering deposition methods, gate insulators, and passivation layers- Applications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuits

Oxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

Authors

Yue Kuo Hideo Hosono Tokyo Institute of Technology. Michael S. Shur University of Virginia. Jin Jang