The Latin America, Middle East and Africa IGBT And Super Junction MOSFET Market is expected to witness market growth of 14.3% CAGR during the forecast period (2024-2031).
The Brazil market dominated the LAMEA IGBT And Super Junction MOSFET Market by country in 2023, and is expected to continue to be a dominant market till 2031; thereby, achieving a market value of $600.3 million by 2031. The Argentina market is showcasing a CAGR of 14.9% during 2024-2031. Additionally, the UAE market would register a CAGR of 13.1% during 2024-2031.
The adoption of IGBTs and Super Junction MOSFETs has been significantly driven by the global demand for energy efficiency, greener technologies, and the increasing shift toward automation. These semiconductors have become key enablers of modern power electronics, particularly with the widespread adoption of renewable energy, electric mobility, and the digitalization of industrial processes.
Additionally, adopting solar energy systems and wind energy generation has created a strong demand for efficient power conversion technologies. IGBTs, especially in solar inverters, and Super Junction MOSFETs in wind turbine converters, have helped renewable energy technologies deliver higher efficiency, lower operational costs, and longer lifespan.
As Brazil continues to prioritize renewable energy investments, the IGBT and super junction MOSFET market stand to benefit significantly. These power semiconductor components are vital in optimizing the performance of solar inverters, wind turbine controllers, and other renewable energy systems. As Brazil expands its renewable energy infrastructure and integrates more advanced technologies, the demand for IGBTs and MOSFETs will continue to rise, with these components enabling more efficient and sustainable energy conversion, storage, and transmission solutions. This will further solidify Brazil’s position as a leader in renewable energy adoption while driving growth in the global power electronics industry.
The Brazil market dominated the LAMEA IGBT And Super Junction MOSFET Market by country in 2023, and is expected to continue to be a dominant market till 2031; thereby, achieving a market value of $600.3 million by 2031. The Argentina market is showcasing a CAGR of 14.9% during 2024-2031. Additionally, the UAE market would register a CAGR of 13.1% during 2024-2031.
The adoption of IGBTs and Super Junction MOSFETs has been significantly driven by the global demand for energy efficiency, greener technologies, and the increasing shift toward automation. These semiconductors have become key enablers of modern power electronics, particularly with the widespread adoption of renewable energy, electric mobility, and the digitalization of industrial processes.
Additionally, adopting solar energy systems and wind energy generation has created a strong demand for efficient power conversion technologies. IGBTs, especially in solar inverters, and Super Junction MOSFETs in wind turbine converters, have helped renewable energy technologies deliver higher efficiency, lower operational costs, and longer lifespan.
As Brazil continues to prioritize renewable energy investments, the IGBT and super junction MOSFET market stand to benefit significantly. These power semiconductor components are vital in optimizing the performance of solar inverters, wind turbine controllers, and other renewable energy systems. As Brazil expands its renewable energy infrastructure and integrates more advanced technologies, the demand for IGBTs and MOSFETs will continue to rise, with these components enabling more efficient and sustainable energy conversion, storage, and transmission solutions. This will further solidify Brazil’s position as a leader in renewable energy adoption while driving growth in the global power electronics industry.
List of Key Companies Profiled
- ON Semiconductor Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- Texas Instruments, Inc.
- Rohm Co., Ltd.
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- Fuji Electric Co. Ltd.
- ABB Group
- Renesas Electronics Corporation
Market Report Segmentation
By Type
- IGBT
- IGBT Module
- Discrete IGBT
- Super Junction MOSFET
- Discrete Super Junction MOSFET
- Super Junction MOSFET Module
By Application
- Energy & Power
- Inverter & UPS
- Consumer Electronics
- Industrial System
- Electric Vehicle
- Other Application
By Country
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA
Table of Contents
Chapter 1. Market Scope & Methodology
Chapter 2. Market at a Glance
Chapter 3. Market Overview
Chapter 4. Competition Analysis - Global
Chapter 5. LAMEA IGBT And Super Junction MOSFET Market by Type
Chapter 6. LAMEA IGBT And Super Junction MOSFET Market by Application
Chapter 7. LAMEA IGBT And Super Junction MOSFET Market by Country
Chapter 8. Company Profiles
Companies Mentioned
- ON Semiconductor Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- Texas Instruments, Inc.
- Rohm Co., Ltd.
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- Fuji Electric Co. Ltd.
- ABB Group
- Renesas Electronics Corporation
Methodology
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