The silicon carbide semiconductor device market size has grown exponentially in recent years. It will grow from $1.97 billion in 2024 to $2.45 billion in 2025 at a compound annual growth rate (CAGR) of 24.4%. The growth in the historic period can be attributed to early development in silicon carbide (sic), demand for high-temperature applications, power electronics evolution, telecommunications and rf applications, military and aerospace applications.
The silicon carbide semiconductor device market size is expected to see exponential growth in the next few years. It will grow to $5.33 billion in 2029 at a compound annual growth rate (CAGR) of 21.5%. The growth in the forecast period can be attributed to growth in electric vehicles (EVs), renewable energy expansion, 5g network deployment, industrial and motor drives, growth in power transmission. Major trends in the forecast period include increasing power density requirements, adoption in automotive industry, expansion in power electronics, rapid advancements in manufacturing, proliferation of renewable energy.
The rising demand for electric vehicles (EVs) is anticipated to drive growth in the silicon carbide semiconductor device market in the coming years. An electric vehicle is a motorized mode of transport powered by electricity from a battery that can be charged externally. Silicon carbide semiconductor devices are advantageous in EV powertrains due to their higher power densities and switching efficiency, which means that as the demand for electric vehicles grows, so does the need for silicon carbide semiconductor devices. For example, in 2024, the International Energy Agency (IEA), an autonomous intergovernmental organization based in France, reported that sales of electric cars reached 3.5 million in 2023, marking a 35% year-on-year increase from 2022. Furthermore, the Net Zero Emissions by 2050 Scenario projects that there will be over 300 million electric cars on the road by 2030, accounting for 60% of all new car sales. Thus, the increasing demand for electric vehicles is propelling the silicon carbide semiconductor device market forward.
The rise in industrial automation is poised to fuel the growth of the silicon carbide semiconductor device market. Industrial automation involves the use of control systems, such as computers or robots, to manage various processes and machinery in industries, aiming to replace human intervention and enhance efficiency. Silicon carbide (SiC) devices, known for their high-speed switching capabilities, improved power efficiency, compact designs, and high power density, play a crucial role in facilitating efficient and responsive control in automated industrial processes. The superior thermal performance, increased reliability, and durability of SiC devices make them well-suited for challenging industrial environments. As evidenced in a March 2022 survey conducted by ABB Robotics, a Switzerland-based automation company, attitudes towards automation in the UK underwent a transformation due to the pandemic. A significant portion, 81.2%, of 250 surveyed UK manufacturing companies expressed consideration for robot investments. Robots are perceived as a potential solution, with 48.8% indicating a such aslihood of investing in automation within the next five years, and 50.4% recognizing robots as instrumental in complying with social distancing requirements. Consequently, the surge in industrial automation serves as a driving factor for the growth of the silicon carbide semiconductor device market.
The escalating trend of industrial automation is set to propel the growth of the silicon carbide semiconductor device market. Industrial automation, involving the use of control systems such as computers and robots to enhance efficiency and replace human intervention in industrial processes, benefits from silicon carbide devices' high-speed switching capabilities, improved power efficiency, compact designs, and high power density. A survey conducted by ABB Ltd. in March 2022 revealed a shift in attitudes towards automation, with 81.2% of 250 UK manufacturing companies considering robot investments due to the pandemic. SiC devices' superior thermal performance, reliability, and durability make them indispensable in demanding industrial environments, thus fostering the expansion of the silicon carbide semiconductor device market.
A prominent trend in the silicon carbide semiconductor device market is the prevalence of technological advancements. Key market players are actively engaged in developing innovative technologies to strengthen their market positions. In September 2022, AIXTRON, a Germany-based silicon carbide semiconductor device manufacturer, introduced the G10-SiC 200 mm system, the next generation of silicon carbide epitaxy technology. This system offers versatility with a dual wafer size configuration, supporting a range of device structures while meeting stringent uniformity requirements. Major companies in the market are also focusing on reducing switching losses to gain a competitive advantage. Toshiba Electronic Devices & Storage Corporation, in August 2023, launched its third-generation silicon carbide MOSFETs designed to minimize losses in various applications, including servers, data centers, electric vehicle charging stations, photovoltaic inverters, and uninterruptible power supplies. The incorporation of a Kelvin connection in the MOSFETs enhances high-speed switching performance, representing a significant advancement in power electronics technology for industrial applications.
In August 2022, Navitas, a US-based semiconductor company, completed the acquisition of GeneSiC Semiconductor for $100 million. This strategic move aimed to create a comprehensive technology portfolio in next-generation power semiconductors within the silicon carbide semiconductor devices market. GeneSiC, operating in the same market, contributed to the consolidation of expertise and resources, positioning both companies as industry leaders.
Major companies operating in the silicon carbide semiconductor device market include Infineon Technologies India Private Ltd., ROHM Co. Ltd., STMicroelectronics, Wolfspeed Inc., Toshiba Corporation, TT Electronics PLC, Mitsubishi Electric Corporation, Microsemi Corporation, Powerex Inc., Microchip Technology Corporation, Hitachi Power Semiconductor Device Ltd., Semikron, Global Power Technologies Group, Texas instruments Inc., NXP Semiconductors N.V., ON Semiconductor Corporation, United Silicon Carbide Inc., GeneSiC Semiconductor Inc., Danfoss A/S, Fuji Electric Co. Ltd., II-VI Incorporated, Xiamen Sanan Integrated Circuit Co.Ltd., Shanghai Hanxin Technology, Century Jinguang, BYD Semiconductor Co. Ltd., InventChip Technology Co. Ltd., CRRC Corporation Limited, Renesas Electronics Vietnam Co.Ltd.
Asia-Pacific was the largest region in the silicon carbide semiconductor device market in 2024. The regions covered in the silicon carbide semiconductor device market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the silicon carbide semiconductor device market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
A silicon carbide semiconductor device comprises a silicon carbide substrate, a primary electrode, the first barrier layer, and an interconnecting layer. These devices are characterized by their small size, robust construction, and high efficiency, making them particularly suitable for developing power electronic devices in batteries and detectors.
The main types of silicon carbide semiconductor devices include SiC diodes, SiC transistors, and others (SiC modules, thyristors). A silicon carbide transistor is typically a normally-on junction-based transistor known for its reliability, featuring the lowest RDS (on) per unit area. These devices are available in various wafer sizes ranging from 1 inch to 4 inches, 6 inches, 8 inches, 10 inches, and above. Silicon carbide semiconductor devices are utilized by diverse end-users, including automotive, consumer electronics, aerospace and defense, medical devices, data and communication devices, energy and power, and other industries.
The silicon carbide semiconductor device market research report is one of a series of new reports that provides silicon carbide semiconductor device market statistics, including silicon carbide semiconductor device industry global market size, regional shares, competitors with a silicon carbide semiconductor device market share, detailed silicon carbide semiconductor device market segments, market trends and opportunities and any further data you may need to thrive in the silicon carbide semiconductor device industry. This silicon carbide semiconductor device market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.
The silicon carbide semiconductor device market consists of sales of silicon carbide power modules, silicon carbide metal-oxide-semiconductor field effect transistors (MOSFETs)and silicon carbide insulated-gate bipolar transistors (IGBTs). Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
This product will be delivered within 3-5 business days.
The silicon carbide semiconductor device market size is expected to see exponential growth in the next few years. It will grow to $5.33 billion in 2029 at a compound annual growth rate (CAGR) of 21.5%. The growth in the forecast period can be attributed to growth in electric vehicles (EVs), renewable energy expansion, 5g network deployment, industrial and motor drives, growth in power transmission. Major trends in the forecast period include increasing power density requirements, adoption in automotive industry, expansion in power electronics, rapid advancements in manufacturing, proliferation of renewable energy.
The rising demand for electric vehicles (EVs) is anticipated to drive growth in the silicon carbide semiconductor device market in the coming years. An electric vehicle is a motorized mode of transport powered by electricity from a battery that can be charged externally. Silicon carbide semiconductor devices are advantageous in EV powertrains due to their higher power densities and switching efficiency, which means that as the demand for electric vehicles grows, so does the need for silicon carbide semiconductor devices. For example, in 2024, the International Energy Agency (IEA), an autonomous intergovernmental organization based in France, reported that sales of electric cars reached 3.5 million in 2023, marking a 35% year-on-year increase from 2022. Furthermore, the Net Zero Emissions by 2050 Scenario projects that there will be over 300 million electric cars on the road by 2030, accounting for 60% of all new car sales. Thus, the increasing demand for electric vehicles is propelling the silicon carbide semiconductor device market forward.
The rise in industrial automation is poised to fuel the growth of the silicon carbide semiconductor device market. Industrial automation involves the use of control systems, such as computers or robots, to manage various processes and machinery in industries, aiming to replace human intervention and enhance efficiency. Silicon carbide (SiC) devices, known for their high-speed switching capabilities, improved power efficiency, compact designs, and high power density, play a crucial role in facilitating efficient and responsive control in automated industrial processes. The superior thermal performance, increased reliability, and durability of SiC devices make them well-suited for challenging industrial environments. As evidenced in a March 2022 survey conducted by ABB Robotics, a Switzerland-based automation company, attitudes towards automation in the UK underwent a transformation due to the pandemic. A significant portion, 81.2%, of 250 surveyed UK manufacturing companies expressed consideration for robot investments. Robots are perceived as a potential solution, with 48.8% indicating a such aslihood of investing in automation within the next five years, and 50.4% recognizing robots as instrumental in complying with social distancing requirements. Consequently, the surge in industrial automation serves as a driving factor for the growth of the silicon carbide semiconductor device market.
The escalating trend of industrial automation is set to propel the growth of the silicon carbide semiconductor device market. Industrial automation, involving the use of control systems such as computers and robots to enhance efficiency and replace human intervention in industrial processes, benefits from silicon carbide devices' high-speed switching capabilities, improved power efficiency, compact designs, and high power density. A survey conducted by ABB Ltd. in March 2022 revealed a shift in attitudes towards automation, with 81.2% of 250 UK manufacturing companies considering robot investments due to the pandemic. SiC devices' superior thermal performance, reliability, and durability make them indispensable in demanding industrial environments, thus fostering the expansion of the silicon carbide semiconductor device market.
A prominent trend in the silicon carbide semiconductor device market is the prevalence of technological advancements. Key market players are actively engaged in developing innovative technologies to strengthen their market positions. In September 2022, AIXTRON, a Germany-based silicon carbide semiconductor device manufacturer, introduced the G10-SiC 200 mm system, the next generation of silicon carbide epitaxy technology. This system offers versatility with a dual wafer size configuration, supporting a range of device structures while meeting stringent uniformity requirements. Major companies in the market are also focusing on reducing switching losses to gain a competitive advantage. Toshiba Electronic Devices & Storage Corporation, in August 2023, launched its third-generation silicon carbide MOSFETs designed to minimize losses in various applications, including servers, data centers, electric vehicle charging stations, photovoltaic inverters, and uninterruptible power supplies. The incorporation of a Kelvin connection in the MOSFETs enhances high-speed switching performance, representing a significant advancement in power electronics technology for industrial applications.
In August 2022, Navitas, a US-based semiconductor company, completed the acquisition of GeneSiC Semiconductor for $100 million. This strategic move aimed to create a comprehensive technology portfolio in next-generation power semiconductors within the silicon carbide semiconductor devices market. GeneSiC, operating in the same market, contributed to the consolidation of expertise and resources, positioning both companies as industry leaders.
Major companies operating in the silicon carbide semiconductor device market include Infineon Technologies India Private Ltd., ROHM Co. Ltd., STMicroelectronics, Wolfspeed Inc., Toshiba Corporation, TT Electronics PLC, Mitsubishi Electric Corporation, Microsemi Corporation, Powerex Inc., Microchip Technology Corporation, Hitachi Power Semiconductor Device Ltd., Semikron, Global Power Technologies Group, Texas instruments Inc., NXP Semiconductors N.V., ON Semiconductor Corporation, United Silicon Carbide Inc., GeneSiC Semiconductor Inc., Danfoss A/S, Fuji Electric Co. Ltd., II-VI Incorporated, Xiamen Sanan Integrated Circuit Co.Ltd., Shanghai Hanxin Technology, Century Jinguang, BYD Semiconductor Co. Ltd., InventChip Technology Co. Ltd., CRRC Corporation Limited, Renesas Electronics Vietnam Co.Ltd.
Asia-Pacific was the largest region in the silicon carbide semiconductor device market in 2024. The regions covered in the silicon carbide semiconductor device market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the silicon carbide semiconductor device market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
A silicon carbide semiconductor device comprises a silicon carbide substrate, a primary electrode, the first barrier layer, and an interconnecting layer. These devices are characterized by their small size, robust construction, and high efficiency, making them particularly suitable for developing power electronic devices in batteries and detectors.
The main types of silicon carbide semiconductor devices include SiC diodes, SiC transistors, and others (SiC modules, thyristors). A silicon carbide transistor is typically a normally-on junction-based transistor known for its reliability, featuring the lowest RDS (on) per unit area. These devices are available in various wafer sizes ranging from 1 inch to 4 inches, 6 inches, 8 inches, 10 inches, and above. Silicon carbide semiconductor devices are utilized by diverse end-users, including automotive, consumer electronics, aerospace and defense, medical devices, data and communication devices, energy and power, and other industries.
The silicon carbide semiconductor device market research report is one of a series of new reports that provides silicon carbide semiconductor device market statistics, including silicon carbide semiconductor device industry global market size, regional shares, competitors with a silicon carbide semiconductor device market share, detailed silicon carbide semiconductor device market segments, market trends and opportunities and any further data you may need to thrive in the silicon carbide semiconductor device industry. This silicon carbide semiconductor device market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.
The silicon carbide semiconductor device market consists of sales of silicon carbide power modules, silicon carbide metal-oxide-semiconductor field effect transistors (MOSFETs)and silicon carbide insulated-gate bipolar transistors (IGBTs). Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
This product will be delivered within 3-5 business days.
Table of Contents
1. Executive Summary2. Silicon Carbide Semiconductor Device Market Characteristics3. Silicon Carbide Semiconductor Device Market Trends and Strategies4. Silicon Carbide Semiconductor Device Market - Macro Economic Scenario Including the Impact of Interest Rates, Inflation, Geopolitics, and the Recovery from COVID-19 on the Market1 Inch To 4 Inches6 Inches8 Inches32. Global Silicon Carbide Semiconductor Device Market Competitive Benchmarking and Dashboard33. Key Mergers and Acquisitions in the Silicon Carbide Semiconductor Device Market34. Recent Developments in the Silicon Carbide Semiconductor Device Market
5. Global Silicon Carbide Semiconductor Device Growth Analysis and Strategic Analysis Framework
6. Silicon Carbide Semiconductor Device Market Segmentation
10 Inches and Above
7. Silicon Carbide Semiconductor Device Market Regional and Country Analysis
8. Asia-Pacific Silicon Carbide Semiconductor Device Market
9. China Silicon Carbide Semiconductor Device Market
10. India Silicon Carbide Semiconductor Device Market
11. Japan Silicon Carbide Semiconductor Device Market
12. Australia Silicon Carbide Semiconductor Device Market
13. Indonesia Silicon Carbide Semiconductor Device Market
14. South Korea Silicon Carbide Semiconductor Device Market
15. Western Europe Silicon Carbide Semiconductor Device Market
16. UK Silicon Carbide Semiconductor Device Market
17. Germany Silicon Carbide Semiconductor Device Market
18. France Silicon Carbide Semiconductor Device Market
19. Italy Silicon Carbide Semiconductor Device Market
20. Spain Silicon Carbide Semiconductor Device Market
21. Eastern Europe Silicon Carbide Semiconductor Device Market
22. Russia Silicon Carbide Semiconductor Device Market
23. North America Silicon Carbide Semiconductor Device Market
24. USA Silicon Carbide Semiconductor Device Market
25. Canada Silicon Carbide Semiconductor Device Market
26. South America Silicon Carbide Semiconductor Device Market
27. Brazil Silicon Carbide Semiconductor Device Market
28. Middle East Silicon Carbide Semiconductor Device Market
29. Africa Silicon Carbide Semiconductor Device Market
30. Silicon Carbide Semiconductor Device Market Competitive Landscape and Company Profiles
31. Silicon Carbide Semiconductor Device Market Other Major and Innovative Companies
35. Silicon Carbide Semiconductor Device Market High Potential Countries, Segments and Strategies
36. Appendix
Executive Summary
Silicon Carbide Semiconductor Device Global Market Report 2025 provides strategists, marketers and senior management with the critical information they need to assess the market.This report focuses on silicon carbide semiconductor device market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
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Description
Where is the largest and fastest growing market for silicon carbide semiconductor device ? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward? The silicon carbide semiconductor device market global report answers all these questions and many more.The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, competitive landscape, market shares, trends and strategies for this market. It traces the market’s historic and forecast market growth by geography.
- the market characteristics section of the report defines and explains the market.
- the market size section gives the market size ($b) covering both the historic growth of the market, and forecasting its development.
- the forecasts are made after considering the major factors currently impacting the market. These include:
- the forecasts are made after considering the major factors currently impacting the market. These include the Russia-Ukraine war, rising inflation, higher interest rates, and the legacy of the COVID-19 pandemic.
- Market segmentations break down the market into sub markets.
- the regional and country breakdowns section gives an analysis of the market in each geography and the size of the market by geography and compares their historic and forecast growth. It covers the growth trajectory of COVID-19 for all regions, key developed countries and major emerging markets.
- the competitive landscape chapter gives a description of the competitive nature of the market, market shares, and a description of the leading companies. Key financial deals which have shaped the market in recent years are identified.
- the trends and strategies section analyses the shape of the market as it emerges from the crisis and suggests how companies can grow as the market recovers.
Scope
Markets Covered:
1) by Type: SIC Diode; SIC Transistor; Other Types2) by Wafer Size: 1 Inch To 4 Inches; 6 Inches; 8 Inches; 10 Inches and Above
3) by End-User: Automotive; Consumer Electronics; Aerospace and Defense; Medical Devices; Data and Communication Devices; Energy and Power; Other End-Users
Subsegments:
1) by SiC Diode: Schottky Barrier Diodes (SBD); PiN Diodes2) by SiC Transistor: SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor); SiC BJT (Bipolar Junction Transistor); SiC IGBT (Insulated Gate Bipolar Transistor)
3) by Other Types: SiC Rectifiers; SiC Modules; SiC Power Devices
Key Companies Mentioned: Infineon Technologies India Private Ltd.; ROHM Co. Ltd.; STMicroelectronics; Wolfspeed Inc.; Toshiba Corporation
Countries: Australia; Brazil; China; France; Germany; India; Indonesia; Japan; Russia; South Korea; UK; USA; Canada; Italy; Spain
Regions: Asia-Pacific; Western Europe; Eastern Europe; North America; South America; Middle East; Africa
Time Series: Five years historic and ten years forecast.
Data: Ratios of market size and growth to related markets, GDP proportions, expenditure per capita.
Data Segmentation: Country and regional historic and forecast data, market share of competitors, market segments.
Sourcing and Referencing: Data and analysis throughout the report is sourced using end notes.
Delivery Format: PDF, Word and Excel Data Dashboard.
Companies Mentioned
Some of the major companies featured in this Silicon Carbide Semiconductor Device market report include:- Infineon Technologies India Private Ltd.
- ROHM Co. Ltd.
- STMicroelectronics
- Wolfspeed Inc.
- Toshiba Corporation
- TT Electronics PLC
- Mitsubishi Electric Corporation
- Microsemi Corporation
- Powerex Inc.
- Microchip Technology Corporation
- Hitachi Power Semiconductor Device Ltd.
- Semikron
- Global Power Technologies Group
- Texas instruments Inc.
- NXP Semiconductors N.V.
- ON Semiconductor Corporation
- United Silicon Carbide Inc.
- GeneSiC Semiconductor Inc.
- Danfoss A/S
- Fuji Electric Co. Ltd.
- II-VI Incorporated
- Xiamen Sanan Integrated Circuit Co.Ltd.
- Shanghai Hanxin Technology
- Century Jinguang
- BYD Semiconductor Co. Ltd.
- InventChip Technology Co. Ltd.
- CRRC Corporation Limited
- Renesas Electronics Vietnam Co.Ltd.
Table Information
| Report Attribute | Details |
|---|---|
| No. of Pages | 200 |
| Published | February 2025 |
| Forecast Period | 2025 - 2029 |
| Estimated Market Value ( USD | $ 2.45 Billion |
| Forecasted Market Value ( USD | $ 5.33 Billion |
| Compound Annual Growth Rate | 21.5% |
| Regions Covered | Global |
| No. of Companies Mentioned | 28 |
