Silicon Carbide (SiC) Diodes Market Report 2024

This Silicon Carbide (SiC) Diodes market report covers market characteristics, size and growth, segmentation, regional and country breakdowns, competitive landscape, market shares, trends and strategies for this market. It traces the market's historic and forecast market growth by geography.

The silicon carbide (SiC) diodes market size has grown rapidly in recent years. It will grow from $1.72 billion in 2023 to $1.9 billion in 2024 at a compound annual growth rate (CAGR) of 10.9%. The growth during the historic period can be attributed to increasing demand for energy efficiency, expansion in the renewable energy sector, rising investment in industrial automation, development of smart grids, and the miniaturization of electronic devices.

The silicon carbide (SiC) diodes market size is expected to see rapid growth in the next few years. It will grow to $2.89 billion in 2028 at a compound annual growth rate (CAGR) of 11%. The projected growth can be attributed to the increase in electric vehicle production, ongoing innovation in SiC manufacturing, a growing emphasis on energy efficiency, emerging opportunities in 5G technology, and a global shift towards sustainable energy solutions. Major trends in the forecast period include integration with renewable energy systems, advancements in SiC manufacturing processes, the proliferation of smart grids and energy storage systems, enhanced SiC diode integration in consumer electronics, and the adoption of advanced driver assistance systems.

The growing demand for electric vehicles (EVs) is projected to drive the expansion of the silicon carbide (SiC) diode market in the future. Electric vehicles are powered by electric motors and rechargeable batteries, in contrast to traditional internal combustion engines. The rise in EV adoption is driven by environmental concerns, the expansion of charging infrastructure, and government incentives. SiC diodes enhance the efficiency of EVs by reducing switching losses, improving thermal conductivity, and enabling rapid switching capabilities. These improvements reduce the size and weight of power components, leading to better performance and energy efficiency in EV powertrains. For example, in April 2023, the International Energy Agency reported that electric car sales surpassed 10 million in 2022 and are approaching 14 million in 2023, with targets set to increase to 35% by 2030. Thus, the growing demand for EVs is expected to fuel the growth of the SiC diode market.

Leading companies in the SiC diode market are developing advanced products such as third-generation silicon carbide Schottky barrier chips to improve performance and efficiency in high-power applications. Schottky barrier diodes are designed to achieve high breakdown voltage, low forward voltage drop, high switching speeds, and superior thermal conductivity. For instance, in July 2023, Toshiba Electronic Devices & Storage Corporation, a Japan-based electronics company, launched the TRSxxx65H series. This diode features a low forward voltage of 1.2V, which is 17% lower than the previous generation’s 1.45V, significantly enhancing power conversion efficiency. The series can handle forward DC currents (IF(DC)) up to 12A and square-wave surge currents (IFSM) up to 640A, and is available in TO-220-2L and DFN8×8 packages. The diodes utilize an optimized junction barrier Schottky (JBS) structure, which reduces leakage current and power dissipation, making them more effective for industrial applications.

In November 2021, Qorvo Inc., a US-based wireless company, acquired United Silicon Carbide for an undisclosed amount. This acquisition is aimed at expanding Qorvo's presence in the growing markets of electric vehicles, industrial power, and renewable energy. The deal allows Qorvo to offer high-value, best-in-class intelligent power solutions for power conversion, motion control, and circuit protection. United Silicon Carbide is a US-based manufacturer of SiC diodes.

Major companies operating in the silicon carbide (SiC) diodes market are Mitsubishi Electric Corporation, TOSHIBA CORPORATION, Avnet Inc., STMicroelectronics, Infineon Technologies AG, Renesas Electronics Corporation, ON Semiconductor, Microchip Technology Inc., Qorvo Inc., ROHM CO. LTD., Vishay Intertechnology Inc., Littelfuse Inc., Nexperia, Fuji Electric Co. Ltd., Diodes Incorporated, Alpha and Omega Semiconductor, WOLFSPEED INC., Semikron Danfoss, IXYS Corporation, Sanken Electric Co. Ltd., GeneSiC Semiconductor Inc.

North America was the largest region in the silicon carbide (SiC) diode market in 2023. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in the silicon carbide (SiC) diodes market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.

The countries covered in the silicon carbide (SiC) diodes market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

Silicon carbide (SiC) diodes are semiconductor devices composed of silicon carbide, known for its high breakdown voltage, thermal conductivity, and low forward voltage drop. SiC diodes are utilized in power electronics applications that demand high efficiency, high temperatures, and high frequencies.

The main types of silicon carbide (SiC) diodes include Schottky diodes, junction diodes, p-insulator-n (PIN) diodes, and others. Schottky diodes feature a metal-semiconductor junction that offers a low forward voltage drop and fast switching speeds. They come in various ranges of forward current, including 2 to 5 amperes, 6 to 10 amperes, 11 to 20 amperes, 21 to 40 amperes, and above 40 amperes, with reverse voltages such as 650 volts, 1200 volts, 1700 volts, and 3300 volts. Schottky diodes are used in a range of applications, including automotive, medical imaging, communication, data centers, defense, photovoltaic solutions, and more.

The silicon carbide (SiC) diodes market research report is one of a series of new reports that provides silicon carbide (SiC) diodes market statistics, including silicon carbide (SiC) diodes industry global market size, regional shares, competitors with silicon carbide (SiC) diodes market share, detailed silicon carbide (SiC) diodes market segments, market trends and opportunities, and any further data you may need to thrive in the silicon carbide (SiC) diodes industry. This silicon carbide (SiC) diodes market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.

The silicon carbide (SiC) diode market consists of sales of field-effect diodes and ultrafast recovery diodes. Values in this market are ‘factory gate’ values, that is, the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.


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