The North America Silicon Carbide Semiconductor Devices Market would witness market growth of 19.6% CAGR during the forecast period (2022-2028).
In many information technology systems that run at voltages under 600 V, silicon-based power electronics are increasingly used for power management. Design engineers require high-performance, high-reliability MOSFET devices to meet the high efficiency and power density requirements demanded by modern IT and telecom applications.
Silicon carbide diodes are used in high-end power supplies for telecom and server systems, although silicon carbide MOSFETs remain in the initial stages of commercial penetration. The efficiency of the server power sources has been pushed to ever-higher levels with minimal heat loss. Today's hyperscale data centers power the big data, digital economy, artificial intelligence (AI), and IoT with over 30KW server racks and incredibly sophisticated cooling control systems.
Due to their outstanding material characteristics, silicon carbide semiconductors have become the most promising for next-generation low-cost semiconductors. In addition, the market is expanding due to the rising use of SiC semiconductor devices in numerous power electronics and the broad range of uses for these components in the infrastructure for charging electric vehicles.
In Canada, the federal and provincial governments are assisting the private sector in progress in national electric vehicle battery production in light of the nation's goal of becoming carbon neutral by 2050. This support includes $12 billion in funding from provincial funding of clean technologies and the federal budget's Green Infrastructure Stream. Significant commercial prospects exist in the Canadian market for providers of relevant systems, machinery, and parts for brand-new EV and EV battery manufacturing facilities. The governments of the United States and Canada are both actively promoting the growth of this sector. As a result of the government's intensified efforts to promote the adoption and production of electric vehicles in the region, the regional silicon carbide semiconductors devices market is flourishing.
The US market dominated the North America Silicon Carbide Semiconductor Devices Market by Country in 2021, and would continue to be a dominant market till 2028; thereby, achieving a market value of $1,072 Million by 2028.The Canada market is poised to grow at a CAGR of 22.3% during (2022 - 2028). Additionally, The Mexico market would witness a CAGR of 21.2% during (2022 - 2028).
Based on Product, the market is segmented into Power Semiconductors, Optoelectronic Devices and Frequency Devices. Based on End Use, the market is segmented into Automotive, Energy & Power, Aerospace & Defense, Medical Devices, Data & Communication Devices, Consumer Electronics and Others. Based on Wafer Size, the market is segmented into 1 inch to 4 inches, 6 inches, 8 inches and 10 inches & above. Based on Component, the market is segmented into Power Modules, FET/MOSFET Transistors, Schottky Diodes, Integrated Circuits, Rectifiers/Diodes and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Allegro Microsystems, Inc. (Sanken Electric Co., Ltd.), Infineon Technologies AG, ROHM Co., Ltd., STMicroelectronics N.V., ON Semiconductor Corporation, FUJI ELECTRIC CO., LTD., TT Electronics plc., Mitsubishi Electric Corporation, Toshiba Corporation, and Wolfspeed, Inc.
In many information technology systems that run at voltages under 600 V, silicon-based power electronics are increasingly used for power management. Design engineers require high-performance, high-reliability MOSFET devices to meet the high efficiency and power density requirements demanded by modern IT and telecom applications.
Silicon carbide diodes are used in high-end power supplies for telecom and server systems, although silicon carbide MOSFETs remain in the initial stages of commercial penetration. The efficiency of the server power sources has been pushed to ever-higher levels with minimal heat loss. Today's hyperscale data centers power the big data, digital economy, artificial intelligence (AI), and IoT with over 30KW server racks and incredibly sophisticated cooling control systems.
Due to their outstanding material characteristics, silicon carbide semiconductors have become the most promising for next-generation low-cost semiconductors. In addition, the market is expanding due to the rising use of SiC semiconductor devices in numerous power electronics and the broad range of uses for these components in the infrastructure for charging electric vehicles.
In Canada, the federal and provincial governments are assisting the private sector in progress in national electric vehicle battery production in light of the nation's goal of becoming carbon neutral by 2050. This support includes $12 billion in funding from provincial funding of clean technologies and the federal budget's Green Infrastructure Stream. Significant commercial prospects exist in the Canadian market for providers of relevant systems, machinery, and parts for brand-new EV and EV battery manufacturing facilities. The governments of the United States and Canada are both actively promoting the growth of this sector. As a result of the government's intensified efforts to promote the adoption and production of electric vehicles in the region, the regional silicon carbide semiconductors devices market is flourishing.
The US market dominated the North America Silicon Carbide Semiconductor Devices Market by Country in 2021, and would continue to be a dominant market till 2028; thereby, achieving a market value of $1,072 Million by 2028.The Canada market is poised to grow at a CAGR of 22.3% during (2022 - 2028). Additionally, The Mexico market would witness a CAGR of 21.2% during (2022 - 2028).
Based on Product, the market is segmented into Power Semiconductors, Optoelectronic Devices and Frequency Devices. Based on End Use, the market is segmented into Automotive, Energy & Power, Aerospace & Defense, Medical Devices, Data & Communication Devices, Consumer Electronics and Others. Based on Wafer Size, the market is segmented into 1 inch to 4 inches, 6 inches, 8 inches and 10 inches & above. Based on Component, the market is segmented into Power Modules, FET/MOSFET Transistors, Schottky Diodes, Integrated Circuits, Rectifiers/Diodes and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Allegro Microsystems, Inc. (Sanken Electric Co., Ltd.), Infineon Technologies AG, ROHM Co., Ltd., STMicroelectronics N.V., ON Semiconductor Corporation, FUJI ELECTRIC CO., LTD., TT Electronics plc., Mitsubishi Electric Corporation, Toshiba Corporation, and Wolfspeed, Inc.
Scope of the Study
Market Segments Covered in the Report:
By Product
- Power Semiconductors
- Optoelectronic Devices
- Frequency Devices
By End Use
- Automotive
- Energy & Power
- Aerospace & Defense
- Medical Devices
- Data & Communication Devices
- Consumer Electronics
- Others
By Wafer Size
- 1 inch to 4 inches
- 6 inches
- 8 inches
- 10 inches & above
By Component
- Power Modules
- FET/MOSFET Transistors
- Schottky Diodes
- Integrated Circuits
- Rectifiers/Diodes
- Others
By Country
- US
- Canada
- Mexico
- Rest of North America
Key Market Players
List of Companies Profiled in the Report:
- Allegro Microsystems, Inc. (Sanken Electric Co., Ltd.)
- Infineon Technologies AG
- ROHM Co., Ltd
- STMicroelectronics N.V
- ON Semiconductor Corporation
- FUJI ELECTRIC CO., LTD
- TT Electronics plc
- Mitsubishi Electric Corporation
- Toshiba Corporation
- Wolfspeed, Inc
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Table of Contents
Chapter 1. Market Scope & Methodology1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 North America Silicon Carbide Semiconductor Devices Market, by Product
1.4.2 North America Silicon Carbide Semiconductor Devices Market, by End Use
1.4.3 North America Silicon Carbide Semiconductor Devices Market, by Wafer Size
1.4.4 North America Silicon Carbide Semiconductor Devices Market, by Component
1.4.5 North America Silicon Carbide Semiconductor Devices Market, by Country
1.5 Methodology for the research
Chapter 2. Market Overview
2.1 Introduction
2.1.1 Overview
2.1.1.1 Market Composition & Scenario
2.2 Key Factors Impacting the Market
2.2.1 Market Drivers
2.2.2 Market Restraints
Chapter 3. Competition Analysis - Global
3.1 KBV Cardinal Matrix
3.2 Recent Industry Wide Strategic Developments
3.2.1 Partnerships, Collaborations and Agreements
3.2.2 Product Launches and Product Expansions
3.2.3 Acquisition and Mergers
3.2.4 Geographical Expansions
3.3 Top Winning Strategies
3.3.1 Key Leading Strategies: Percentage Distribution (2018-2022)
3.3.2 Key Strategic Move: (Partnerships, Collaborations and Agreements : 2022, Jul - 2023, Jan) Leading Players
Chapter 4. North America Silicon Carbide Semiconductor Devices Market by Product
4.1 North America Power Semiconductors Market by Country
4.2 North America Optoelectronic Devices Market by Country
4.3 North America Frequency Devices Market by Country
Chapter 5. North America Silicon Carbide Semiconductor Devices Market by End-use
5.1 North America Automotive Market by Country
5.2 North America Energy & Power Market by Country
5.3 North America Aerospace & Defense Market by Country
5.4 North America Medical Devices Market by Country
5.5 North America Data & Communication Devices Market by Country
5.6 North America Consumer Electronics Market by Country
5.7 North America Others Market by Country
Chapter 6. North America Silicon Carbide Semiconductor Devices Market by Wafer Size
6.1 North America 1 inch to 4 inches Market by Country
6.2 North America 6 inches Market by Country
6.3 North America 8 inches Market by Country
6.4 North America 10 inches & above Market by Country
Chapter 7. North America Silicon Carbide Semiconductor Devices Market by Component
7.1 North America Power Modules Market by Country
7.2 North America FET/MOSFET Transistors Market by Country
7.3 North America Schottky Diodes Market by Country
7.4 North America Integrated Circuits Market by Country
7.5 North America Rectifiers/Diodes Market by Country
7.6 North America Others Market by Country
Chapter 8. North America Silicon Carbide Semiconductor Devices Market by Country
8.1 US Silicon Carbide Semiconductor Devices Market
8.1.1 US Silicon Carbide Semiconductor Devices Market by Product
8.1.2 US Silicon Carbide Semiconductor Devices Market by End-use
8.1.3 US Silicon Carbide Semiconductor Devices Market by Wafer Size
8.1.4 US Silicon Carbide Semiconductor Devices Market by Component
8.2 Canada Silicon Carbide Semiconductor Devices Market
8.2.1 Canada Silicon Carbide Semiconductor Devices Market by Product
8.2.2 Canada Silicon Carbide Semiconductor Devices Market by End-use
8.2.3 Canada Silicon Carbide Semiconductor Devices Market by Wafer Size
8.2.4 Canada Silicon Carbide Semiconductor Devices Market by Component
8.3 Mexico Silicon Carbide Semiconductor Devices Market
8.3.1 Mexico Silicon Carbide Semiconductor Devices Market by Product
8.3.2 Mexico Silicon Carbide Semiconductor Devices Market by End-use
8.3.3 Mexico Silicon Carbide Semiconductor Devices Market by Wafer Size
8.3.4 Mexico Silicon Carbide Semiconductor Devices Market by Component
8.4 Rest of North America Silicon Carbide Semiconductor Devices Market
8.4.1 Rest of North America Silicon Carbide Semiconductor Devices Market by Product
8.4.2 Rest of North America Silicon Carbide Semiconductor Devices Market by End-use
8.4.3 Rest of North America Silicon Carbide Semiconductor Devices Market by Wafer Size
8.4.4 Rest of North America Silicon Carbide Semiconductor Devices Market by Component
Chapter 9. Company Profiles
9.1 Toshiba Corporation
9.1.1 Company Overview
9.1.2 Financial Analysis
9.1.3 Segmental and Regional Analysis
9.1.4 Research and Development Expense
9.1.5 SWOT Analysis
9.2 Infineon Technologies AG
9.2.1 Company Overview
9.2.2 Financial Analysis
9.2.3 Segmental and Regional Analysis
9.2.4 Research & Development Expense
9.2.5 Recent strategies and developments:
9.2.5.1 Partnerships, Collaborations, and Agreements:
9.2.5.2 Acquisition and Mergers:
9.3 Allegro Microsystems, Inc. (Sanken Electric Co., Ltd.)
9.3.1 Company Overview
9.3.2 Financial Analysis
9.3.3 Regional Analysis
9.3.4 Research & Development Expenses
9.3.5 Recent strategies and developments:
9.3.5.1 Partnerships, Collaborations, and Agreements:
9.3.5.2 Product Launches and Product Expansions:
9.3.5.3 Acquisition and Mergers:
9.4 Wolfspeed, Inc.
9.4.1 Company Overview
9.4.2 Financial Analysis
9.4.3 Regional Analysis
9.4.4 Research & Development Expenses
9.4.5 Recent strategies and developments:
9.4.5.1 Partnerships, Collaborations, and Agreements:
9.4.5.2 Geographical Expansions:
9.5 Rohm Co., Ltd.
9.5.1 Company Overview
9.5.2 Financial Analysis
9.5.3 Segmental and Regional Analysis
9.5.4 Research & Development Expense
9.5.5 Recent strategies and developments:
9.5.5.1 Partnerships, Collaborations, and Agreements:
9.6 TT Electronics PLC
9.6.1 Company Overview
9.6.2 Financial Analysis
9.6.3 Regional & Segmental Analysis
9.6.4 Research & Development Expenses
9.7 STMicroelectronics N.V.
9.7.1 Company Overview
9.7.2 Financial Analysis
9.7.3 Segmental and Regional Analysis
9.7.4 Research & Development Expense
9.7.5 Recent strategies and developments:
9.7.5.1 Partnerships, Collaborations, and Agreements:
9.7.5.2 Product Launches and Product Expansions:
9.8 ON Semiconductor Corporation
9.8.1 Company Overview
9.8.2 Financial Analysis
9.8.3 Segmental and Regional Analysis
9.8.4 Research & Development Expense
9.8.5 Recent strategies and developments:
9.8.5.1 Acquisition and Mergers:
9.8.5.2 Geographical Expansions:
9.9 Fuji Electric Co. Ltd.
9.9.1 Company Overview
9.9.2 Financial Analysis
9.9.3 Segmental and Regional Analysis
9.9.4 Research & Development Expense
9.9.5 Recent strategies and developments:
9.9.5.1 Product Launches and Product Expansions:
9.10. Mitsubishi Electric Corporation
9.10.1 Company Overview
9.10.2 Financial Analysis
9.10.3 Segmental and Regional Analysis
9.10.4 Research & Development Expense
9.10.5 Recent strategies and developments:
9.10.5.1 Acquisition and Mergers:
Companies Mentioned
- Allegro Microsystems, Inc. (Sanken Electric Co., Ltd.)
- Infineon Technologies AG
- ROHM Co., Ltd.
- STMicroelectronics N.V.
- ON Semiconductor Corporation
- FUJI ELECTRIC CO., LTD.
- TT Electronics plc.
- Mitsubishi Electric Corporation
- Toshiba Corporation
- Wolfspeed, Inc.
Methodology
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