Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars.
Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7.
A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices.
The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7.
A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices.
The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Readership
Students in advanced engineering courses; researchers and industry professionals.Table of Contents
Chapter 1 Advancements in Gan Technologies: Power, Rf, Digital and Quantum Applications- A. Mohanbabu, S. Maheswari, N. Vinodhkumar, P. Murugapandiyan and R. Saravana Kumar
- Introduction
- Characteristics of Gan:
- Motivation for the Present Research Work
- Review of Gan-Based Devices
- N-Polarity Gan/Inn/Gan/In0.9Al0.1N Heterostructure E-Mode Hfo2 Insulated Mis-
- Hemts
- Boron-Doped Gan Gate Cap Layer in a Double Heterostructure (Dh) Hemts for Full-
- Bridge Inverter Circuit.
- Full-Bridge Inverter Circuit
- Conclusion
- References
- Xiaoshuai An and Kwai Hei Li
- Introduction
- Sensing Mechanisms of Gan-Based Integrated Optical Devices
- Gan-Based Integrated Devices for Proximity Sensing
- Proximity Sensor
- Airflow Sensor
- Viscosity Sensor
- Gan-Based Integrated Devices for Refractive Index Sensing
- Refractive Index Sensor
- Force Sensing
- Angle Sensor
- Challenges and Future Scopes
- Conclusion
- References
- Emitting Diodes
- Hoang-Duy Nguyen, Mano Bala Sankar Muthu and Hieu Pham Trung Nguyen
- Introduction
- Luminescence Nanomaterials
- Nanowire Iii-Nitride Leds
- Phosphor-Converted Nanowire Leds
- Conclusion and Perspectives
- References
- Structures
- Narayan Sahoo, Ajit K. Sahu, Sangeeta K. Palo and Trinath Sahu
- Introduction
- Theory
- Quantum Well Structures
- Gaas/Alxga1-Xas Square Quantum Well
- Alxga1-Xas Non-Square Quantum Wells
- Electron Energy Eigenvalues and Eigenfunctions in Dqw Structures in the Presence Of
- Fapp
- Multisubband Electron Transport Lifetime
- Results and Discussion
- Double Parabolic Quantum Well (Dpqw) Structure
- Double V-Shaped Quantum Well Structure (Dvqw)
- Double Semi-Parabolic Quantum Well (Dspqw) Structure
- Double Semi-V-Shaped Quantum Well (Dsvqw) Structure
- Double Square Quantum Well (Dsqw) Structure:
- Comparison of Τ in Square and Non-Square Dqw Structures
- Conclusion
- Reference
- G. Purnachandra Rao, Tanjim Rahman, E Raghuveera and Trupti Ranjan Lenka
- Introduction
- Basic Structure of Hemt
- Heterojunctions
- Equilibrium Band Diagram of Type-I Heterojunction
- Electrostatics of a Heterojunction
- Principle Operation of Hemts
- Classification of Hemts
- Other Iii-Nitride Hemts
- Challenges Associated With Hemts
- Conclusion
- References
- G. Purnachandra Rao, Tanjim Rahman and Trupti Ranjan Lenka
- Introduction
- Motivation Toward Hemt
- Cut-Off (Off State)
- Linear Region (Triode Region)
- Saturation Region (Active Region)
- Heterostructure Design
- Two-Dimensional Electron Gas (2Deg)
- Material Composition
- Dc Results Analysis of Algan/Gan Hemt
- Advantages of Hemt Over Mosfet
- Performance Analysis Using Different Hemt Models
- Ee Model
- Parasitic Resistances
- Saturated Drain Current
- Source and Drain Capacitance
- Results
- Asm Model
- Surface Potential
- Drain Current
- Access Region Resistance
- Gate Current
- Results
- Mvsg Model
- Structure
- Logic Device Modelling
- Results
- Challenges and Future Scopes
- Conclusion
- References
- G. Purnachandra Rao, Tanjim Rahman, E. Raghuveera and Trupti Ranjan Lenka
- Introduction
- Reliability Analysis
- Doping With Fe
- Doping With Carbon
- Challenges and Future Scopes
- Conclusion
- References
- Applications, and Challenges
- M. Nomitha Reddy and Deepak Kumar Panda
- Introduction
- Physical Properties
- Polymorphism
- Β-Ga2O3 Properties
- Crystal Structure
- Thermal Properties
- Optical Properties
- Growth and Deposition Methods
- Chemical Synthesis
- Thermal Vaporization and Sublimation
- Chemical Vapor Deposition
- Molecular Beam Epitaxy
- Applications
- Catalysis
- Phosphors and Electroluminescent Devices
- Gas Sensors
- High Power and High Voltage Devices
- Schottky Diodes
- Field Effect Transistors
- Device Structure and Simulation Setup
- Results and Discussion
- Influence on Different Rf Parameters for Different Fin Widths for Jl Ga2O3 Finfet
- Impact by Varying Fin Width on Different Linearity Parameters for Jl Ga2O3 Finfet
- Conclusion
- References
- Meenakshi Chauhan, Kanjalochan Jena, Raghuvir Tomar and Abdul Naim Khan
- Introduction
- Device Structure and Its Dimensions
- Results and Discussion
- Conclusion
- References
- Ashish Kumar Singh and Satyabrata Jit
- Introduction
- Methodologies for Simulating Device Structure
- Results and Discussion
- Dc Analysis
- Rf/Analog Analysis
- Conclusion
- References
- Radhe Gobinda Debnath and Srimanta Baishya
- Introduction
- Computational Details: Setup and Calibration
- Optimization of Design Parameters
- Gate-To-Source Overlap Length
- Germanium Mole Fraction
- Source Doping Concentration
- Epitaxial Layer Thickness
- Comparison of Architectures
- Transient Performance of Sige Source Etltfet
- Conclusion
- References
- Lakshmi Nivas Teja, Rashi Chaudhary, Shreyas Tiwari and Rajesh Saha
- Introduction
- Device Structure and Simulation Set-Up
- Results and Discussion
- Effect of Box Thickness Variation
- Effect of Temperature Variation
- Conclusion
- Acknowledgment
- References
- Nawal Topno, Raghunandan Swain, Dinesh Kumar Dash and M. Suresh
- Introduction
- Nanosheet Finfet Structure
Author
- Trupti Ranjan Lenka
- Hieu Pham Trung Nguyen
