The Global IGBT And Super Junction MOSFET Market size is expected to reach $31.43 billion by 2031, rising at a market growth of 11.6% CAGR during the forecast period.
As electronic devices become more energy-efficient, IGBTs and super junction MOSFETs are increasingly used in applications like power adapters, chargers, and home appliances. Their ability to handle high frequency switching and low power loss contributes to improved energy efficiency and smaller form factors in consumer electronics. This segment continues to grow as the demand for portable, compact, and energy-efficient devices rises, particularly in the smartphone, laptop, and smart home sectors. Thus, the consumer electronics segment held 18% revenue share in the market in 2023.
The major strategies followed by the market participants are partnerships as the key developmental strategy to keep pace with the changing demands of end users. For instance, In November, 2024, Rohm Co., Ltd. and Valeo are collaborating to develop next-generation power electronics for electric vehicles. They are optimizing power modules, including SiC technology, to enhance powertrain efficiency, reduce heat, and improve the performance of high-voltage inverters for BEVs and PHEVs. Additionally, In February, 2024, Infineon Technologies and Honda Motor Co., Ltd. have signed a Memorandum of Understanding (MoU) to collaborate on automotive semiconductor solutions, focusing on power semiconductors, ADAS, and E/E architectures, supporting advanced vehicle technologies and accelerating time-to-market innovations.
Additionally, the growing demand for energy-efficient heating, ventilation, and air conditioning (HVAC) systems is an important driver of the IGBT and super junction MOSFET market. These power semiconductor devices are integral in improving the energy efficiency of electric heating and cooling systems, such as heat pumps and electric air conditioners, by controlling the power conversion in these systems. Hence, as the adoption of energy-efficient HVAC systems rises in residential and commercial markets, these components are expected to be in demand.
The leading players in the market are competing with diverse innovative offerings to remain competitive in the market. The above illustration shows the percentage of revenue shared by some of the leading companies in the market. The leading players of the market are adopting various strategies in order to cater demand coming from the different industries. The key developmental strategies in the market are Partnerships, Collaborations & Agreements.
The IGBT and Super Junction MOSFET market is highly competitive, driven by the growing demand for energy-efficient power semiconductor devices across industries like automotive, renewable energy, and industrial automation. Companies focus on innovations to enhance performance, reduce power losses, and improve thermal efficiency. The competition is fueled by advancements in wide-bandgap technologies like silicon carbide (SiC) and gallium nitride (GaN). Regional manufacturers compete with global players by catering to cost-sensitive markets, creating a dynamic landscape shaped by technological and cost-driven strategies.
As electronic devices become more energy-efficient, IGBTs and super junction MOSFETs are increasingly used in applications like power adapters, chargers, and home appliances. Their ability to handle high frequency switching and low power loss contributes to improved energy efficiency and smaller form factors in consumer electronics. This segment continues to grow as the demand for portable, compact, and energy-efficient devices rises, particularly in the smartphone, laptop, and smart home sectors. Thus, the consumer electronics segment held 18% revenue share in the market in 2023.
The major strategies followed by the market participants are partnerships as the key developmental strategy to keep pace with the changing demands of end users. For instance, In November, 2024, Rohm Co., Ltd. and Valeo are collaborating to develop next-generation power electronics for electric vehicles. They are optimizing power modules, including SiC technology, to enhance powertrain efficiency, reduce heat, and improve the performance of high-voltage inverters for BEVs and PHEVs. Additionally, In February, 2024, Infineon Technologies and Honda Motor Co., Ltd. have signed a Memorandum of Understanding (MoU) to collaborate on automotive semiconductor solutions, focusing on power semiconductors, ADAS, and E/E architectures, supporting advanced vehicle technologies and accelerating time-to-market innovations.
Cardinal Matrix - Market Competition Analysis
Based on the Analysis presented in the Cardinal matrix; Texas Instruments, Inc., STMicroelectronics N.V., NXP Semiconductors N.V. and ABB Group are the forerunners in the IGBT And Super Junction MOSFET Market. Companies such as Infineon Technologies AG and Mitsubishi Electric Corporation are some of the key innovators in IGBT And Super Junction MOSFET Market. In March, 2022, NXP Semiconductors N.V. and Hitachi Energy collaborate to accelerate SiC MOSFET adoption in e-mobility, enhancing electric vehicle powertrain efficiency. Their combined solution, featuring NXP’s GD3160 gate driver and Hitachi’s RoadPak SiC modules, improves vehicle range, efficiency, and reduces carbon emissions.
Market Growth Factors
Industrial applications increasingly prioritize energy efficiency to reduce operational costs and meet stringent environmental regulations. IGBTs and super junction MOSFETs play a crucial role in improving the power conversion efficiency of industrial systems, including manufacturing machines, robotics, automation systems, and power supplies. Thus, as industrial processes become more digitized and automated, the need for reliable, energy-efficient power components like IGBTs and super junction MOSFETs is expected to increase.Additionally, the growing demand for energy-efficient heating, ventilation, and air conditioning (HVAC) systems is an important driver of the IGBT and super junction MOSFET market. These power semiconductor devices are integral in improving the energy efficiency of electric heating and cooling systems, such as heat pumps and electric air conditioners, by controlling the power conversion in these systems. Hence, as the adoption of energy-efficient HVAC systems rises in residential and commercial markets, these components are expected to be in demand.
Market Restraining Factors
One of the primary challenges in the IGBT and super junction MOSFET market is the high manufacturing cost and complexity associated with their production. These components require advanced materials, such as high-purity silicon or silicon carbide, and intricate fabrication processes to ensure high performance and reliability. Therefore, high manufacturing costs and complex production processes impede the market's growth.
The leading players in the market are competing with diverse innovative offerings to remain competitive in the market. The above illustration shows the percentage of revenue shared by some of the leading companies in the market. The leading players of the market are adopting various strategies in order to cater demand coming from the different industries. The key developmental strategies in the market are Partnerships, Collaborations & Agreements.
Driving and Restraining Factors
Drivers
- Rising Demand for Energy-Efficient Power Electronics in Industrial Applications
- Surge in Demand for Electric Heating and Cooling Systems
- Accelerating Adoption of Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs)
Restraints
- High Manufacturing Costs and Complex Production Processes
- Limited Switching Speed and Efficiency in High-Frequency Applications
Opportunities
- Advancements in 5G Networks and Telecommunications Infrastructure
- Expansion of Renewable Energy Projects and Grid Infrastructure
Challenges
- Competition from Emerging Power Semiconductor Technologies
- Complexity of Integration in Existing Power Electronics Systems
Super Junction MOSFET Outlook
The super junction MOSFET is further subdivided into discrete super junction MOSFET and super junction MOSFET Module. The super junction MOSFET Module segment held 42% revenue share in the market in 2023. Super junction MOSFET modules integrate multiple super junction MOSFETs and related components into a single package, enabling them to handle higher power and deliver improved thermal management.Application Outlook
On the basis of application, the market is segmented into energy & power, inverter & UPS, consumer electronics, industrial system, electric vehicle, and others. The energy & power segment recorded 23% revenue share in the market in 2023. This segment is critical in power generation, distribution, and transmission, where IGBTs and super junction MOSFETs are widely used for energy conversion and control.
Type Outlook
Based on type, the market is divided into IGBT and super junction MOSFET. In 2023, the super junction MOSFET segment held 33% revenue share in the market. Super junction MOSFETs are favored for their high efficiency and lower on-state resistance, making them ideal for applications requiring improved power efficiency and compact designs.IGBT Outlook
The IGBT segment is further subdivided into IGBT module and discrete IGBT. The discrete IGBT segment acquired 44% revenue share in the market in 2023. Discrete IGBTs are widely used in lower-power applications compared to IGBT modules, where a single IGBT device is required for switching and control. These devices are commonly found in motor control, power supplies, and automotive systems applications.Market Competition and Attributes
The IGBT and Super Junction MOSFET market is highly competitive, driven by the growing demand for energy-efficient power semiconductor devices across industries like automotive, renewable energy, and industrial automation. Companies focus on innovations to enhance performance, reduce power losses, and improve thermal efficiency. The competition is fueled by advancements in wide-bandgap technologies like silicon carbide (SiC) and gallium nitride (GaN). Regional manufacturers compete with global players by catering to cost-sensitive markets, creating a dynamic landscape shaped by technological and cost-driven strategies.
By Regional Analysis
Region-wise, the market is analyzed across North America, Europe, Asia Pacific, and LAMEA. In 2023, the North America region witnessed 30% revenue share in the market. The demand for these semiconductor components is driven by the region’s strong presence in industries like energy and power, automotive (especially electric vehicles), and consumer electronics.Recent Strategies Deployed in the Market
- Nov-2023: Mitsubishi Electric and Nexperia have formed a strategic partnership to develop SiC power semiconductors. Mitsubishi Electric will provide SiC MOSFET chips, while Nexperia will develop discrete devices, aiming to boost efficiency in automotive and industrial applications, driving global decarbonization.
- Nov-2023: ROHM acquired Solar Frontier’s Kunitomi Plant, now Miyazaki Plant No.2, to expand SiC power device production. This site will support increasing demand for advanced power electronics, reinforcing ROHM’s position in the market for SiC, IGBT, and Super Junction MOSFETs.
- Jun-2023: Rohm Co., Ltd. and Vitesco Technologies have signed a long-term partnership to secure SiC power semiconductor supply for electric vehicle inverters. The partnership, worth over one billion dollars, aims to deliver highly efficient chips for electric driving and fast charging by 2024.
- Dec-2022: Rohm Co., Ltd. and BASiC Semiconductor formed a strategic partnership to develop advanced SiC power devices for automotive applications. Their collaboration focuses on enhancing electric vehicle powertrains, improving efficiency and performance, and contributing to the technological evolution of new energy vehicles.
- Dec-2022: STMicroelectronics introduces high-efficiency silicon carbide (SiC) power modules for electric vehicles, enhancing performance and driving range. Selected by Hyundai for its E-GMP platform, the modules use ST's third generation SiC MOSFETs, offering improved energy efficiency and faster charging for EVs.
List of Key Companies Profiled
- ON Semiconductor Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- Texas Instruments, Inc.
- Rohm Co., Ltd.
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- Fuji Electric Co. Ltd.
- ABB Group
- Renesas Electronics Corporation
Market Report Segmentation
By Type
- IGBT
- IGBT Module
- Discrete IGBT
- Super Junction MOSFET
- Discrete Super Junction MOSFET
- Super Junction MOSFET Module
By Application
- Energy & Power
- Inverter & UPS
- Consumer Electronics
- Industrial System
- Electric Vehicle
- Other Application
By Geography
- North America
- US
- Canada
- Mexico
- Rest of North America
- Europe
- Germany
- UK
- France
- Russia
- Spain
- Italy
- Rest of Europe
- Asia Pacific
- China
- Japan
- India
- South Korea
- Singapore
- Malaysia
- Rest of Asia Pacific
- LAMEA
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA
Table of Contents
Chapter 1. Market Scope & Methodology
Chapter 2. Market at a Glance
Chapter 3. Market Overview
Chapter 4. Competition Analysis - Global
Chapter 5. Global IGBT And Super Junction MOSFET Market by Type
Chapter 6. Global IGBT And Super Junction MOSFET Market by Application
Chapter 7. Global IGBT And Super Junction MOSFET Market by Region
Chapter 8. Company Profiles
Companies Mentioned
- ON Semiconductor Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- Texas Instruments, Inc.
- Rohm Co., Ltd.
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- Fuji Electric Co. Ltd.
- ABB Group
- Renesas Electronics Corporation
Methodology
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